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74LVT08DB PDF даташит

Спецификация 74LVT08DB изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «3.3V Quad 2-input AND gate».

Детали детали

Номер произв 74LVT08DB
Описание 3.3V Quad 2-input AND gate
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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74LVT08DB Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
74LVT08
3.3V Quad 2-input AND gate
Product specification
IC24 Data Handbook
1996 May 29
Philips
Semiconductors









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74LVT08DB Даташит, Описание, Даташиты
Philips Semiconductors
3.3V Quad 2-input AND gate
Product specification
74LVT08
QUICK REFERENCE DATA
SYMBOL
PARAMETER
tPLH
tPHL
CIN
ICCL
Propagation delay
An or Bn to Yn
Input capacitance
Total supply current
TEST CONDITIONS
Tamb = 25°C; GND = 0V
CL = 50pF;
VCC = 3.3V
VI = 0V or 3.0V
Outputs Low; VCC = 3.6V
TYPICAL
3.0
3.4
4
1
UNIT
ns
pF
mA
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
14-Pin Plastic SSOP
14-Pin Plastic TSSOP
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74LVT08 D
74LVT08 DB
74LVT08 PW
NORTH AMERICA
74LVT08 D
74LVT08 DB
74LVT08PW DH
PKG. DWG. #
SOT108-1
SOT337-1
SOT402-1
PIN CONFIGURATION
A0 1
B0 2
Y0 3
A1 4
B1 5
Y1 6
GND 7
14 VCC
13 B3
12 A3
11 Y3
10 B2
9 A2
8 Y2
SA00342
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 2, 4, 5, 9,
10, 12, 13
An-Bn
Data inputs
3, 6, 8, 11
Yn Data outputs
7 GND Ground (0V)
14 VCC Positive supply voltage
LOGIC SYMBOL
VCC = Pin 14
GND = Pin 7
A0 1
B0 2
A1 4
B1 5
A2 9
B2 10
12
A3
B3 13
3
Y0
6
Y1
8
Y2
11
Y3
SA00344
LOGIC DIAGRAM
1 2 4 5 9 10 12 13
A0 B0 A1 B1 A2 B2 A3 B3
Y0 Y1 Y2 Y3
VCC = Pin 14
GND = Pin 7
3 6 8 11
SA00343
LOGIC SYMBOL (IEEE/IEC)
1&
3
2
4
6
5
9
8
10
12
11
13
SV00061
1996 May 29
2 853-1837 16863









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74LVT08DB Даташит, Описание, Даташиты
Philips Semiconductors
3.3V Quad 2-input AND gate
Product specification
74LVT08
FUNCTION TABLE
INPUTS
Dna Dnb
LL
LH
HL
HH
NOTES:
H = High voltage level
L = Low voltage level
OUTPUT
Qn
L
L
L
H
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
IIK
VI
IOK
VOUT
IOUT
DC supply voltage
DC input diode current
DC input voltage3
DC output diode current
DC output voltage3
DC output current
VI < 0
VO < 0
Output in Off or High state
Output in High state
Output in Low state
–0.5 to +4.6
–50
–0.5 to +7.0
–50
–0.5 to +7.0
–32
64
V
mA
V
mA
V
mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
t/v
Tamb
DC supply voltage
Input voltage
High-level input voltage
Low-level Input voltage
High-level output current
Low-level output current
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
LIMITS
MIN MAX
2.7 3.6
0 5.5
2.0
0.8
–20
32
10
–40 +85
UNIT
V
V
V
V
mA
mA
ns/V
°C
1996 May 29
3










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