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74LVT373D PDF даташит

Спецификация 74LVT373D изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «3.3 Volt ABT octal transparent latch 3-State».

Детали детали

Номер произв 74LVT373D
Описание 3.3 Volt ABT octal transparent latch 3-State
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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74LVT373D Даташит, Описание, Даташиты
Philips Semiconductors Low Voltage Products
3.3 Volt ABT octal transparent latch (3–State)
Objective specification
74LVT373
FEATURES
Designed for use in the 3.3V
high–performance market
Supports mixed–mode signal operation; 5V
input and output voltages with 3.3V VCC
Bus–hold inputs eliminate the need for
external pull-up resistors to hold unused
pins
Live insertion/extraction permitted
No bus current loading when output is tied
to 5V bus
8–bit transparent latch
3-State output buffers
Zero-static power dissipation
Pin and function compatibility with ABT
AC and DC performance compatibility with
ABT
Latch–up protection exceeds 500mA per
JEDEC JC40.2 Std 17
ESD protection exceeds 2000 V per MIL
STD 883 Method 3015 and 200 V per
Machine Model
DESCRIPTION
The 74LVT373 device is designed specifically
for low–voltage (3.3V) VCC operation, but can
provide a TTL interface to a 5V system
environment.
The 74LVT373 high-performance BiCMOS
device combines zero static and low dynamic
power dissipation with high speed and high
output drive.
The 74LVT373 device is an octal transparent
latch coupled to eight 3-State output buffers.
The two sections of the device are controlled
independently by Enable (E) and Output
Enable (OE) control gates.
The data on the D inputs are transferred to
the latch outputs when the Latch Enable (E)
input is High. The latch remains transparent
to the data inputs while E is High, and stores
the data that is present one setup time before
the High-to-Low enable transition.
The 3-State output buffers are designed to
drive heavily loaded 3-State buses, MOS
memories, or MOS microprocessors. The
active-Low Output Enable (OE) controls all
eight 3-State buffers independent of the latch
operation.
When OE is Low, the latched or transparent
data appears at the outputs. When OE is
High, the outputs are in the High-impedance
”OFF” state, which means they will neither
drive nor load the bus.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
tPLH
tPHL
CIN
COUT
ICCZ
Propagation delay
Dn to Qn
Input capacitance
Output capacitance
Total supply current
CONDITIONS
Tamb = 25°C; GND = 0V
CL = 50pF; VCC = 5V
VI = 0V or VCC
VI = 0V or VCC
Outputs disabled; VCC =5.5V
TYPICAL
4.2
4
7
50
UNIT
ns
pF
pF
µA
ORDERING INFORMATION
PACKAGES
20–Pin Plastic SOL
20–Pin Plastic SSOP
20–Pin Plastic TSSOP
TEMPERATURE RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
ORDER CODE
74LVT373D
74LVT373DB
74LVT373PW
PIN DESCRIPTION
PIN NUMBER
1
3, 4, 7, 8, 13, 14, 17, 18
2, 5, 6, 9, 12, 15, 16, 19
11
10
20
SYMBOL
OE
D0-D7
Q0-Q7
E
GND
VCC
Output enable input (active-Low)
Data inputs
Data outputs
Enable input (active-High)
Ground (0V)
Positive supply voltage
FUNCTION
DRAWING NUMBER
0172D
1640B
TBD
July 1993
2









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74LVT373D Даташит, Описание, Даташиты
Philips Semiconductors Low Voltage Products
3.3 Volt ABT octal transparent latch (3–State)
Objective specification
74LVT373
FUNCTION TABLE
INPUTS
OE E
Dn
INTERNAL
REGISTER
OUTPUTS
Q0 – Q7
OPERATING MODE
LH L
LH H
L
H
L
H
Enable and read register
L
i
Lh
L
H
L
H
Latch and read register
LL X
NC
NC Hold
HL
X
H H Dn
NC
Dn
Z
Z
Disable outputs
H=
h=
L=
l=
NC=
X=
Z=
=
High voltage level
High voltage level one set-up time prior to the High-to-Low E transition
Low voltage level
Low voltage level one set-up time prior to the High-to-Low E transition
No change
Don’t care
High impedance “off” state
High-to-Low E transition
LOGIC DIAGRAM
D0 D1 D2 D3 D4 D5 D6 D7
3 4 7 8 13 14 17 18
11
E
1
OE
D
EQ
D
EQ
D
EQ
D
EQ
D
EQ
D
EQ
D
EQ
D
EQ
2 5 6 9 12 15 16 19
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
July 1993
3









No Preview Available !

74LVT373D Даташит, Описание, Даташиты
Philips Semiconductors Low Voltage Products
3.3 Volt ABT octal transparent latch (3–State)
Objective specification
74LVT373
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
IIK
VI
IOK
VOUT
IOUT
Tstg
DC supply voltage
DC input diode current
DC input voltage3
DC output diode current
DC output voltage3
DC output current
Storage temperature range
VI < 0
VO < 0
output in Off or High state
output in Low state
–0.5 to +4.6
–18
–1.2 to +5.5
–50
–0.5 to +5.5
64
–65 to 150
V
mA
V
mA
V
mA
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to abso-
lute–maximum–rated conditions for extended periods may affect device reliability.
2. The performance capability of a high–performance integrated circuit in conjunction with its thermal environment can create junction tempera-
tures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
t/v
Tamb
DC supply voltage
Input voltage
High-level input voltage
Input voltage
High-level output current
Low-level output current
Input transition rise or fall rate
Operating free-air temperature range
LIMITS
Min Max
2.7 3.6
0 VCC
2.0
0.8
–32
64
0 10
0 +70
UNIT
V
V
V
V
mA
mA
ns/V
°C
July 1993
4










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