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74VHC541 Datasheet Download - STMicroelectronics

Номер произв 74VHC541
Описание OCTAL BUS BUFFER
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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74VHC541 Даташит, Описание, Даташиты
74VHC541
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
s HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 4 µA (MAX.) at TA=25°C
s HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
)s POWER DOWN PROTECTION ON INPUTS
t(ss SYMMETRICAL OUTPUT IMPEDANCE:
c|IOH| = IOL = 8 mA (MIN)
us BALANCED PROPAGATION DELAYS:
dtPLH tPHL
ros OPERATING VOLTAGE RANGE:
PVCC(OPR) = 2V to 5.5V
tes PIN AND FUNCTION COMPATIBLE WITH
le74 SERIES 541
os IMPROVED LATCH-UP IMMUNITY
ss LOW NOISE: VOLP = 0.9V (MAX.)
ObDESCRIPTION
-The 74VHC541 is an advanced high-speed
t(s)CMOS OCTAL BUS BUFFER (3-STATE)
fabricated with sub-micron silicon gate and
cdouble-layer metal wiring C2MOS technology.
uThe 3 STATE control gate operates as two input
dAND such that if either G1 or G2 are high, all eight
rooutputs are in the high impedance state.
SOP
TSSOP
Table 1: Order Codes
PACKAGE
SOP
TSSOP
T&R
74VHC541MTR
74VHC541TTR
In order to enhance PC board layout, the
74VHC541 offers a pinout having inputs and
outputs on opposite sides of the package.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
Obsolete PFigure 1: Pin Connection And IEC Logic Symbols
November 2004
Rev. 4
1/12







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74VHC541 Даташит, Описание, Даташиты
74VHC541
Figure 2: Input Equivalent Circuit
Table 2: Pin Description
PIN N°
1, 19
2, 3, 4, 5, 6,
7, 8, 9
18, 17, 16,
15, 14, 13,
12, 11
10
20
SYMBOL
G1, G2
A1 to A8
NAME AND FUNCTION
Output Enable Inputs
Data Inputs
Y1 to Y8 Data Outputs
GND
VCC
Ground (0V)
Positive Supply Voltage
t(s)Table 3: Truth Table
cINPUT
duG1 G2
roH X
PX H
teL L
leL L
oX : Don’t care
sZ : High impedance
bTable 4: Absolute Maximum Ratings
OUTPUT
An Yn
XZ
XZ
HH
LL
- OSymbol
Parameter
t(s)VCC Supply Voltage
cVI DC Input Voltage
uVO DC Output Voltage
rodIIK DC Input Diode Current
IOK DC Output Diode Current
PIO DC Output Current
teICC or IGND DC VCC or Ground Current
leTstg Storage Temperature
soTL Lead Temperature (10 sec)
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to VCC + 0.5
- 20
± 20
± 25
± 75
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
°C
°C
ObAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 5: Recommended Operating Conditions
Symbol
VCC
VI
VO
Top
dt/dv
Parameter
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V)
(VCC = 5.0 ± 0.5V)
1) VIN from 30% to 70% of VCC
Value
2 to 5.5
0 to 5.5
0 to VCC
-55 to 125
0 to 100
0 to 20
Unit
V
V
V
°C
ns/V
2/12







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74VHC541 Даташит, Описание, Даташиты
74VHC541
Table 6: DC Specifications
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
VIH High Level Input
Voltage
2.0
3.0 to
5.5
1.5
0.7VCC
1.5
0.7VCC
1.5
0.7VCC
V
VIL Low Level Input
2.0
0.5 0.5 0.5
Voltage
3.0 to
5.5
0.3VCC
0.3VCC
0.3VCC V
VOH High Level Output 2.0
IO=-50 µA
1.9 2.0
1.9
1.9
t(s)Voltage
3.0 IO=-50 µA 2.9 3.0 2.9 2.9
4.5 IO=-50 µA 4.4 4.5 4.4 4.4
V
uc3.0
IO=-4 mA
2.58
2.48 2.4
d4.5
IO=-8 mA
3.94
3.8 3.7
roVOL Low Level Output
PVoltage
2.0
3.0
IO=50 µA
IO=50 µA
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
te4.5 IO=50 µA
0.0 0.1 0.1 0.1 V
le3.0 IO=4 mA
0.36 0.44 0.55
o4.5 IO=8 mA
0.36 0.44 0.55
bsIOZ High Impedance
Output Leakage
OCurrent
5.5
VI = VIH or VIL
VO = VCC or GND
±0.25
± 2.5
± 2.5 µA
) -II Input Leakage
t(sCurrent
0 to
5.5
VI = 5.5V or GND
± 0.1
±1
± 1 µA
Obsolete ProducICC
Quiescent Supply
Current
5.5 VI = VCC or GND
4 40 40 µA
3/12










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