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Datasheet 74VHC86 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 74VHC86 | QUAD EXCLUSIVE OR GATE ®
74VHC86
QUAD EXCLUSIVE OR GATE
PRELIMINARY DATA
s s
s
s s
s
s
s
s s
HIGH SPEED: tPD = 4.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = |  STMicroelectronics | gate |
| 2 | 74VHC86 | Quad 2-Input Exclusive-OR Gate 74VHC86 Quad 2-Input Exclusive-OR Gate
November 1992 Revised April 1999
74VHC86 Quad 2-Input Exclusive-OR Gate
General Description
The VHC86 is an advanced high speed CMOS Quad Exclusive OR Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalen |  Fairchild Semiconductor | gate |
| 3 | 74VHC86M | QUAD EXCLUSIVE OR GATE ®
74VHC86
QUAD EXCLUSIVE OR GATE
PRELIMINARY DATA
s s
s
s s
s
s
s
s s
HIGH SPEED: tPD = 4.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = | STMicroelectronics | gate |
| 4 | 74VHC86M | Quad 2-Input Exclusive-OR Gate 74VHC86 Quad 2-Input Exclusive-OR Gate
November 1992 Revised April 1999
74VHC86 Quad 2-Input Exclusive-OR Gate
General Description
The VHC86 is an advanced high speed CMOS Quad Exclusive OR Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalen | Fairchild Semiconductor | gate |
| 5 | 74VHC86MTC | Quad 2-Input Exclusive-OR Gate 74VHC86 Quad 2-Input Exclusive-OR Gate
November 1992 Revised April 1999
74VHC86 Quad 2-Input Exclusive-OR Gate
General Description
The VHC86 is an advanced high speed CMOS Quad Exclusive OR Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalen | Fairchild Semiconductor | gate |
74V Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 74V1G00 | SINGLE 2-INPUT NAND GATE ®
74V1G00
SINGLE 2-INPUT NAND GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BAL STMicroelectronics gate | | |
| 2 | 74V1G00C | SINGLE 2-INPUT NAND GATE ®
74V1G00
SINGLE 2-INPUT NAND GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BAL STMicroelectronics gate | | |
| 3 | 74V1G00S | SINGLE 2-INPUT NAND GATE ®
74V1G00
SINGLE 2-INPUT NAND GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BAL STMicroelectronics gate | | |
| 4 | 74V1G02 | SINGLE 2-INPUT NOR GATE ®
74V1G02
SINGLE 2-INPUT NOR GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALA STMicroelectronics gate | | |
| 5 | 74V1G02C | SINGLE 2-INPUT NOR GATE ®
74V1G02
SINGLE 2-INPUT NOR GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALA STMicroelectronics gate | | |
| 6 | 74V1G02S | SINGLE 2-INPUT NOR GATE ®
74V1G02
SINGLE 2-INPUT NOR GATE
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALA STMicroelectronics gate | | |
| 7 | 74V1G03 | SINGLE 2-INPUT OPEN DRAIN NAND GATE ®
74V1G03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
PRELIMINARY DATA
s s
s
s s
s
HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC (OPR) = STMicroelectronics gate | |
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