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7C199-35 PDF даташит

Спецификация 7C199-35 изготовлена ​​​​«Cypress Semiconductor» и имеет функцию, называемую «32K x 8 Static RAM».

Детали детали

Номер произв 7C199-35
Описание 32K x 8 Static RAM
Производители Cypress Semiconductor
логотип Cypress Semiconductor логотип 

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7C199-35 Даташит, Описание, Даташиты
99
CY7C199
Features
• High speed
— 10 ns
• Fast tDOE
• CMOS for optimum speed/power
• Low active power
— 467 mW (max, 12 ns “L” version)
• Low standby power
www.DataSheet4U.co0m.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C199 is a high-performance CMOS static RAM orga-
nized as 32,768 words by 8 bits. Easy memory expansion is
32K x 8 Static RAM
provided by an active LOW Chip Enable (CE) and active LOW
Output Enable (OE) and three-state drivers. This device has
an automatic power-down feature, reducing the power con-
sumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O0
through I/O7) is written into the memory location addressed by
the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Logic Block Diagram
A0
A1
A2
A3
A4
AA56
A7
A8
A9
CE
WE
OE
INPUT BUFFER
1024 x 32 x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
Selection Guide
C1991
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Pin Configurations
DIP / SOJ / SOIC
Top View
LCC
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A4
25 A3
24 A2
23 A1
22 OE
21 A0
20 CE
19 I/O7
18 I/O6
3 2 1 2827
A8 4
A9 5
A10 6
A11 7
A12 8
A13 9
A14 10
26 A4
25 A3
24 A2
23 A1
22 OE
21 A0
20 CE
I/O0 11
19 I/O7
I/O1 12
18 I/O6
1314151617
17 I/O5
C1993
16 I/O4
15 I/O3
C1992
OE
A1
A2
A3
A4
WE
V CC
A5
A6
A7
A8
A9
A 10
A 11
22
23
24
25
26
27
28
1
2
3
4
5
6
7
TSOP I
Top View
(not to scale)
21 A 0
20 CE
19 I/O 7
18 I/O 6
17 I/O 5
16 I/O 4
15 I/O 3
14 GND
13 I/O 2
12 I/O 1
11 I/O 0
10 A 14
9 A 13
8 A 12
C1994
Maximum Access Time (ns)
Maximum Operating
Current (mA)
L
Maximum CMOS
Standby Current (mA) L
7C199-8
8
120
0.5
7C199-10
10
110
90
0.5
0.05
7C199-12
12
160
90
10
0.05
7C199-15
15
155
90
10
0.05
7C199-20
20
150
90
10
0.05
7C199-25
25
150
80
10
0.05
7C199-35
35
140
70
10
0.05
7C199-45
45
140
10
Shaded area contains advance information.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05160 Rev. **
Revised September 7, 2001









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7C199-35 Даташит, Описание, Даташиты
CY7C199
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. 65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... 0.5V to +7.0V
Operating Range
Range
Ambient Temperature[2]
www.DataSheetC4Uo.mcommercial
Industrial
Military
0°C to +70°C
40°C to +85°C
55°C to +125°C
VCC
5V ± 10%
5V ± 10%
5V ± 10%
DC Voltage Applied to Outputs
in High Z State[1] ................................... 0.5V to VCC + 0.5V
DC Input Voltage[1] ................................ 0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Electrical Characteristics Over the Operating Range[3]
7C199-8
Parameter Description
Test Conditions
Min. Max.
VOH
Output HIGH
VCC = Min., IOH=4.0 mA 2.4
Voltage
VOL
Output LOW
VCC = Min., IOL=8.0 mA
Voltage
0.4
VIH Input HIGH
Voltage
2.2 VCC
+0.3V
VIL Input LOW
Voltage
0.5 0.8
IIX
Input Load
GND < VI < VCC
Current
5 +5
IOZ Output Leakage GND < VO < VCC,
Current
Output Disabled
5 +5
ICC
VCC Operating VCC = Max.,
Coml
Supply Current IOUT = 0 mA,
f = fMAX = 1/tRC
L
Mil
120
ISB1 Automatic CE Max. VCC,
Coml
Power-Down
CE > VIH,
L
CurrentTTL VIN > VIH or
Inputs
VIN < VIL, f = fMAX
ISB2 Automatic CE Max. VCC,
Coml
Power-Down
CurrentCMOS
Inputs
CE > VCC 0.3V
VIN > VCC 0.3V
or VIN < 0.3V, f = 0
L
Mil
5
0.5
0.05
Shaded area contains advance information.
Notes:
1. VIL (min.) = 2.0V for pulse durations of less than 20 ns.
2. TA is the instant oncase temperature.
3. See the last page of this specification for Group A subgroup testing information.
7C199-10
Min. Max.
2.4
0.4
2.2 VCC
+0.3V
0.5 0.8
5 +5
5 +5
110
85
5
5
0.5
0.05
7C199-12
Min. Max.
2.4
0.4
2.2 VCC
+0.3V
0.5 0.8
5 +5
5 +5
160
85
30
5
10
0.05
7C199-15
Min. Max.
2.4
0.4
2.2
0.5
VCC
+0.3V
0.8
5 +5
5 +5
155
100
180
30
5
10
0.05
15
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
Document #: 38-05160 Rev. **
Page 2 of 16









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7C199-35 Даташит, Описание, Даташиты
CY7C199
Electrical Characteristics Over the Operating Range[3] (continued)
7C199-20 7C199-25 7C199-35
Parameter Description
Test Conditions
Min. Max. Min. Max. Min. Max.
VOH
Output HIGH
VCC = Min., IOH=4.0 mA 2.4
2.4
2.4
Voltage
VOL
Output LOW
VCC = Min., IOL=8.0 mA
0.4
0.4
0.4
Voltage
VIH Input HIGH
Voltage
2.2 VCC 2.2 VCC 2.2 VCC
+0.3V
+0.3V
+0.3V
VIL
www.DataSheet4U.com
Input LOW
Voltage
0.5 0.8 -0.5 0.8 -0.5 0.8
IIX
Input Load
GND < VI < VCC
Current
5 +5 5 +5 5 +5
IOZ Output Leakage GND < VI < VCC,
Current
Output Disabled
5 +5 5 +5 5 +5
ICC
VCC Operating VCC = Max.,
Coml
Supply Current
IOUT = 0 mA,
f = fMAX = 1/tRC
L
Mil
150
90
170
150
80
150
140
70
150
ISB1 Automatic CE Max. VCC,CE > VIH, Coml
Power-Down
Current
VIN > VIH
or VIN < VIL, f = fMAX
L
TTL Inputs
30
5
30
5
25
5
ISB2 Automatic CE Max. VCC,
Coml
Power-Down
Current
CE > VCC 0.3V
VIN > VCC 0.3V or
L
CMOS Inputs VIN < 0.3V, f=0
Mil
10
0.05
15
10
0.05
15
10
0.05
15
]
Capacitance[4]
Parameter
Description
Test Conditions
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
Max.
8
8
7C199-45
Min. Max.
2.4
Unit
V
0.4 V
2.2 VCC V
+0.3V
-0.5 0.8 V
5 +5 µA
5 +5 µA
140 mA
70 mA
150 mA
25 mA
5 mA
10 mA
0.05 µA
15 mA
Unit
pF
pF
Document #: 38-05160 Rev. **
Page 3 of 16










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Номер в каталогеОписаниеПроизводители
7C199-3532K x 8 Static RAMCypress Semiconductor
Cypress Semiconductor

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