7MBI100N-060 PDF даташит
Спецификация 7MBI100N-060 изготовлена «Fuji Electric» и имеет функцию, называемую «IGBT(600V/100A)». |
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Детали детали
Номер произв | 7MBI100N-060 |
Описание | IGBT(600V/100A) |
Производители | Fuji Electric |
логотип |
8 Pages
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IGBT MODULE ( N series )
n Features
• Including Brake Chopper
• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function
( ~ 3 Times Rated Current )
n Equivalent Circuit
n Outline Drawing
n Absolute Maximum Ratings ( Tc=25°C)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Screw Torque *1
Terminal Screw Torque *1
Symbols
VCES
VGES
IC
IC PULSE
-IC PULSE
PC
VCES
VCES
IC
IC PULSE
PC
VRRM
IF(AV)
IFSM
Tj
TStg
VISO
Test Conditions
Ratings Units
600
± 20
V
Continuous
100
1ms 200 A
Continuous
150
1 device
400 W
600
± 20
V
Continuous
1ms
50
100
A
1 device
200 W
600 V
10ms
1
50
A
+150
-40 ∼ +125
°C
A.C. 1min.
2500
V
3.5
3.5
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
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n Electrical Characteristics( Tj=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
Turn-on Time
Turn-off Time
Reverse Current
Reverse Recovery Time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
toff
tf
IRRM
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=100mA
VGE=15V IC=100A
f=1MHz, VGE=0V, VCE=10V
VCC=300V
IC =100A
VGE=±15V
RG = 24Ω
IF=100A VGE=0V
IF=100A; VGE=-10V;
-di/dt=300
A/µs
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=15V IC=50A
VCC=300V
IC = 50A
VGE=±15V
RG = 51Ω
VR=600V
Min. Max.
3.0
15
4.5 7.5
2.8
6600 (typ.)
1.2
1.5
0.35
3.3
300
1.0
100
2.8
1.2
1.5
0.35
1.0
600
Units
mA
µA
V
pF
µs
V
ns
mA
nA
V
µs
mA
ns
n Thermal Characteristics
Items
Thermal Resistance (1 device)
Contact Thermal Resistance
Symbols
Rth(j-c)
Rth(c-f)
Test Conditions
Inverter IGBT
Inverter FRD
Brake IGBT
With Thermal Compound
Min. Max.
0.31
0.90
0.63
0.05 (typ.)
Units
°C/W
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Collector current vs. Collector-Emitter voltage
Tj=25°C
250
VGE=20V,15V,12V
200
150 10V
100
50
8V
0
0123456
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4 IC=
200A
2 100A
50A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
VCC=300V, RG=24Ω , VGE=±15V, Tj=25°C
ttoofnf
tr
tf
Collector current vs. Collector-Emitter voltage
Tj=125°C
250
VGE=20V,15V, 12V
200
150 10V
100
50
8V
0
0123456
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4 IC=
200A
100A
2
50A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=300V, RG=24Ω , VGE=±15V, Tj=125°C
toff
ton
tr
tf
100
10
0
50 100 150
Collector current : IC [A]
10
0
50 100 150
Collector current : IC [A]
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Номер в каталоге | Описание | Производители |
7MBI100N-060 | IGBT(600V/100A) | Fuji Electric |
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