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7MBI75N-060 PDF даташит

Спецификация 7MBI75N-060 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT(600V/75A)».

Детали детали

Номер произв 7MBI75N-060
Описание IGBT(600V/75A)
Производители Fuji Electric
логотип Fuji Electric логотип 

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7MBI75N-060 Даташит, Описание, Даташиты
IGBT MODULE ( N series )
n Features
n Outline Drawing
Including Brake Chopper
Square RBSOA
Low Saturation Voltage
Overcurrent LimiPti.nOg. FBuonxc7ti0o2n708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax)
( ~ 3 Times Rated Current )
n Equivalent Circuit
P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax)
n Absolute Maximum Ratings ( Tc=25°C)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Screw Torque *1
Terminal Screw Torque *1
Symbols
VCES
VGES
IC
IC PULSE
-IC PULSE
PC
VCES
VCES
IC
IC PULSE
PC
VRRM
IF(AV)
IFSM
Tj
TStg
VISO
Test Conditions
Ratings Units
600
± 20
V
Continuous
75
1ms 150 A
Continuous
75
1 device
320 W
600
± 20
V
Continuous
1ms
50
100
A
1 device
200 W
600 V
10ms
1
50
A
+150
-40 +125
°C
A.C. 1min.
2500
V
3.5
3.5
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)









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7MBI75N-060 Даташит, Описание, Даташиты
n Electrical Characteristics( Tj=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
Turn-on Time
Turn-off Time
Reverse Current
Reverse Recovery Time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
toff
tf
IRRM
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=75mA
VGE=15V IC=75A
f=1MHz, VGE=0V, VCE=10V
VCC=300V
IC = 75A
VGE=±15V
RG = 33
IF=75A VGE=0V
IF=75A; VGE=-10V;
-di/dt=225
A/µs
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=15V IC=50A
VCC=300V
IC = 50A
VGE=±15V
RG = 51
VR=600V
Min. Max.
3.0
15
4.5 7.5
2.8
4950 (typ.)
1.2
1.5
0.35
3.0
300
1.0
100
2.8
1.2
1.5
0.35
1.0
600
Units
mA
µA
V
pF
µs
V
ns
mA
nA
V
µs
mA
ns
n Thermal Characteristics
Items
Thermal Resistance (1 device)
Contact Thermal Resistance
Symbols
Rth(j-c)
Rth(c-f)
Test Conditions
Inverter IGBT
Inverter FRD
Brake IGBT
With Thermal Compound
Min. Max.
0.39
0.90
0.63
0.05 (typ.)
Units
°C/W









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7MBI75N-060 Даташит, Описание, Даташиты
Collector current vs. Collector-Emitter voltage
Tj=25°C
175
VGE=20V,15V,12V
150
125
10V
100
75
50
25
0
0
1234
Collector-Emitter voltage : VCE [V]
8V
5
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4 IC=
150A
2 75A
37.5A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
VCC=300V, RG=33, VGE=±15V, Tj=25°C
ttoofnf
tr
tf
Collector current vs. Collector-Emitter voltage
Tj=125°C
175
VGE=20V,15V, 12V,
150
125
10V
100
75
50
25 8V
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4 IC=
150A
75A
2
37.5A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=300V, RG=33, VGE=±15V, Tj=125°C
t
t
off
on
t
t
r
f
100
10
0
25 50 75 100
Collector current : IC [A]
125
10
0
25 50 75 100
Collector current : IC [A]
125










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Номер в каталогеОписаниеПроизводители
7MBI75N-060IGBT(600V/75A)Fuji Electric
Fuji Electric

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