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7MBR50NE-060 PDF даташит

Спецификация 7MBR50NE-060 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «Power Integrated Module (PIM)».

Детали детали

Номер произв 7MBR50NE-060
Описание Power Integrated Module (PIM)
Производители Fuji Electric
логотип Fuji Electric логотип 

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7MBR50NE-060 Даташит, Описание, Даташиты
Power Integrated Module (PIM)
n Features
Included Rectifier and Brake Chopper
Square RBSOA
Low Saturation Voltage
Overcurrent Limiting Function
( ~ 3 Times Rated Current )
n Equivalent Circuit
n Outline Drawing
n Absolute Maximum Ratings ( Tc=25°C)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2t (Non Repetitive)
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Screw Torque *1
Symbols
VCES
VGES
IC
IC PULSE
-IC PULSE
PC
VRRM
VRSM
IO
IFSM
VCES
VGES
IC
IC PULSE
PC
VRRM
IF(AV)
IFSM
Tj
TStg
VISO
Test Conditions
Ratings Units
600
± 20
V
Continuous
50
1ms 100 A
1ms 50
1 device
200 W
800
900
V
50Hz/60Hz sin. wave
Tj=150°C, 10ms
50
350
A
Tj=150°C, 10ms
648 A2s
600 V
± 20
Continuous
1ms
50
100
A
1 device
200 W
600 V
10ms
1
50
A
+150
-40 +125
°C
A.C. 1min.
2500
V
1.7 Nm
Note: *1:Recommendable Value; 1.3 1.7 Nm (M4)









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7MBR50NE-060 Даташит, Описание, Даташиты
n Electrical Characteristics( Tj=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Forward Voltage
Reverse Current
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
Turn-on Time
Turn-off Time
Reverse Current
Reverse Recovery Time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
VFM
IRRM
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=50mA
VGE=15V IC=50A
f=1MHz, VGE=0V,
VCE=10V
VCC =
300V
IC = 50A
VGE =
±15V
RG = 51
IF=50A VGE=0V
IF=50A
IF = 50A
VR =800V
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=15V IC=50A
VCC =
300V
IC = 50A
VGE =
±15V
RG = 51
VR=600V
Min. Max.
1.0
20
4.5 7.5
2.9
3300 (typ.)
Units
mA
µA
V
pF
1.2
0.6
1.0
0.35
3.1
350
1.55
1.0
1.0
100
2.8
0.8
0.6
1.0
0.35
1.0
600
µs
V
ns
V
mA
mA
nA
V
µs
mA
ns
n Thermal Characteristics
Items
Thermal Resistance (1 device)
Contact Thermal Resistance
Symbols
Rth(j-c)
Rth(c-f)
Test Conditions
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With Thermal Compound
Min. Max.
0.63
1.60
0.63
2.10
0.05 (typ.)
Units
°C/W









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7MBR50NE-060 Даташит, Описание, Даташиты
Collector current vs. Collector-Emitter voltage
Tj=25°C
125
VGE=20V,15V,12V,
100
75 10V
50
25
0
0
1234
Collector-Emitter voltage : VCE [V]
8V
5
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4 IC=
100A
2 50A
25A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
VCC=300V, RG=51W, VGE=±15V, Tj=25°C
t
t
on
off
tr
tf
Collector current vs. Collector-Emitter voltage
Tj=125°C
125
VGE=20V,15V, 12V,
100
75 10V
50
25
0
0
8V
1234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4 IC=
100A
50A
2
25A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=300V, RG=51, VGE=±15V, Tj=125°C
ttoofnf
tr
tf
100
10
0
20 40 60
Collector current : IC [A]
80
10
0 20 40 60 80
Collector current : IC [A]










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Номер в каталогеОписаниеПроизводители
7MBR50NE-060Power Integrated Module (PIM)Fuji Electric
Fuji Electric

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