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7MBR50SB120 PDF даташит

Спецификация 7MBR50SB120 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT(1200V/50A/PIM)».

Детали детали

Номер произв 7MBR50SB120
Описание IGBT(1200V/50A/PIM)
Производители Fuji Electric
логотип Fuji Electric логотип 

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7MBR50SB120 Даташит, Описание, Даташиты
7MBR50SB120
IGBT MODULE (S series)
1200V / 50A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
ICP
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
Rat ing
1200
±20
75
50
150
100
50
360
1200
±20
35
25
70
50
180
1200
1600
50
520
1352
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m









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7MBR50SB120 Даташит, Описание, Даташиты
IGBT Modules
7MBR50SB120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=50A
VGE=±15V
RG=24
IF=50A
chip
terminal
IF=50A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=25A, VGE=15V chip
terminal
VCC=600V
IC=25A
VGE=±15V
RG=51
VR=1200V
IF=50A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5 7.2
8.5
2.1
2.3 2.7
6000
0.35 1.2
0.25 0.6
0.1
0.45 1.0
0.08 0.3
2.3
2.5 3.3
0.35
1.0
0.2
2.1
2.25 2.7
0.35 1.2
0.25 0.6
0.45 1.0
0.08 0.3
1.0
1.1
1.2 1.5
1.0
5000
465 495
520
3305
3375
3450
Unit
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
Min.
Characteristics
Typ.
Max.
0.35
0.75
0.69
0.50
0.05
Unit
°C/W
[Converter]
1(R) 2(S) 3(T)
21(P)
[Brake]
22(P1)
[In v er ter ]
7(B)
20(G u)
18(G v)
16(G w)
1 9 (E u )
1 7 (E v )
4(U)
15(Ew)
5(V)
[T h e rm is to r]
89
6(W )
23(N)
14(G b)
24(N1)
13(G x)
12(G y)
11(G z)
10(En)









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7MBR50SB120 Даташит, Описание, Даташиты
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
120
VGE= 20V 15V 12V
100
80
10V
60
40
20
0
0
120
100
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Tj= 25 oC
Tj= 125 oC
80
60
40
20
0
012345
Collector - Emitter voltage : VCE [ V ]
20000
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cies
1000
Coes
Cres
100
0
5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
30
35
7MBR50SB120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
120
VGE= 20V 15V 12V
100
80
10V
60
40
20
0
0
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
1000
Ic= 100A
Ic= 50A
Ic= 25A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25 oC
25
25
800 20
600 15
400 10
200 5
00
0 100 200 300 400 500
Gate charge : Qg [ nC ]










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