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NE6500379 PDF даташит

Спецификация NE6500379 изготовлена ​​​​«NEC» и имеет функцию, называемую «3W L / S-BAND POWER GaAs MESFET».

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Номер произв NE6500379
Описание 3W L / S-BAND POWER GaAs MESFET
Производители NEC
логотип NEC логотип 

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NE6500379 Даташит, Описание, Даташиты
DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high
linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s
stringent quality and control procedures.
FEATURES
• High Output Power
: Po (1dB) = +35 dBm typ.
• High Linear Gain
: 10 dB typ.
• High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz
ORDERING INFORMATION
Part Number
Package
NE6500379A-T1 79A
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6500379A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IG
PT
Tch
Tstg
Ratings
15
–7
5.6
50
21
150
–65 to +150
Unit
V
V
A
mA
W
°C
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13495EJ2V0DS00 (2nd edition)
Date Published August 1998 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998









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NE6500379 Даташит, Описание, Даташиты
NE6500379A
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Conditions
MIN.
TYP.
6.0
MAX.
6.0
3.0
+125
Unit
V
dB
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Output Power at 1 dB Gain
Compression Point
Drain Current
Power Added Efficiency
Linear GainNote 1
Symbol
IDSS
Vp
BVgd
Test Conditions
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, ID = 21 mA
Igd = 21 mA
Rth
Po(1dB)
ID
ηadd
GL
Channel to Case
f = 1.9 GHz, VDS = 6.0 V
Rg = 30
IDset = 500 mA (RF OFF)
Note 2
MIN.
–3.6
17
TYP.
4.5
MAX.
–1.6
Unit
A
V
V
5
35.0
6 °C/W
dBm
1.0
50
9.0 10.0
A
%
dB
Notes 1. Pin = 0 dBm
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2









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NE6500379 Даташит, Описание, Даташиты
NE6500379A
OUTPUT POWER, DRAIN CURRENT AND GATE CURRENT vs. INPUT POWER
40
VDS = 6 V
IDset = 500 mA (RF OFF)
Rg = 30
35 f = 1.9 GHZ
30
25
20
15
Pout
ID
IG
20 1500
15
1000
10
5
500
0
10
0
–5 0
5 10 15 20 25 30 35
Pin [dBm]
3










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