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NE650R279A PDF даташит

Спецификация NE650R279A изготовлена ​​​​«NEC» и имеет функцию, называемую «0.2 W L / S-BAND POWER GaAs MES FET».

Детали детали

Номер произв NE650R279A
Описание 0.2 W L / S-BAND POWER GaAs MES FET
Производители NEC
логотип NEC логотип 

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NE650R279A Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE650R279A
0.2 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
: PO (1 dB) = +23 dBm typ.
• High Linear Gain
: 16 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz
ORDERING INFORMATION (PLAN)
Part Number
NE650R279A-T1
79A
Package
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R279A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IGF
IGR
PT
Tch
Tstg
Ratings
15
–7
0.3
8
8
2.1
150
–65 to +150
Unit
V
V
A
mA
mA
W
°C
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13678EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998









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NE650R279A Даташит, Описание, Даташиты
NE650R279A
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Conditions
MIN.
TYP.
6.0
MAX.
6.0
3.0
+125
Unit
V
dB
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Output Power at 1 dB Gain
Compression Point
Drain Current
Power Added Efficiency
Linear GainNote 1
Symbol
IDSS
Vp
BVgd
Test Conditions
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, ID = 1 mA
Igd = 1 mA
Rth
PO (1 dB)
ID
ηadd
GL
Channel to Case
f = 1.9 GHz, VDS = 6.0 V
Rg = 30
IDset = 50 mA (RF OFF)
Note 2
MIN.
–2.5
13
TYP.
150
MAX.
–0.5
Unit
mA
V
V
40
23.0
60 °C/W
dBm
15.0
72
45
16.0
mA
%
dB
Notes 1. Pin = 0 dBm
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2 Preliminary Data Sheet









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NE650R279A Даташит, Описание, Даташиты
NE650R279A
NE650R279A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, IDset = 50 mA (Preliminary Data)
freq. (MHz)
S11
MAG. ANG. (deg.)
S21
MAG. ANG. (deg.)
S12
MAG. ANG. (deg.)
S22
MAG. ANG. (deg.)
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.865
–103.4
5.788
133.2
0.070
53.2
0.403
–73.5
0.861
–108.0
5.593
131.9
0.072
51.5
0.397
–76.7
0.850
–112.1
5.439
130.8
0.073
51.1
0.392
–79.2
0.839
–116.0
5.182
129.1
0.075
50.9
0.387
–82.1
0.833
–120.5
5.026
129.1
0.078
50.6
0.382
–84.9
0.827
–124.9
4.992
128.4
0.081
49.2
0.376
–87.5
0.817
–129.4
4.888
125.6
0.082
47.2
0.368
–90.2
0.809
–133.1
4.739
124.9
0.082
45.8
0.360
–93.0
0.806
–137.7
4.628
123.6
0.081
45.6
0.349
–95.7
0.795
–143.0
4.518
121.8
0.081
46.2
0.336
–98.5
0.789
–148.3
4.403
119.9
0.083
46.5
0.325
–101.6
0.781
–153.4
4.383
118.2
0.086
46.0
0.311
–104.9
0.778
–157.5
4.348
116.6
0.087
44.3
0.300
–107.6
0.779
–162.9
4.065
115.8
0.087
42.7
0.288
–110.5
0.778
–167.0
3.910
113.8
0.085
42.2
0.276
–113.5
0.778
–172.1
3.763
113.1
0.084
42.1
0.264
–117.3
0.781
–176.7
3.632
112.8
0.083
41.4
0.256
–121.0
Preliminary Data Sheet
3










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