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PDF NE650R479A Data sheet ( Hoja de datos )
| Número de pieza | NE650R479A | |
| Descripción | 0.4 W L / S-BAND POWER GaAs MES FET | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE650R479A
0.4 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
: PO (1 dB) = +26 dBm typ.
• High Linear Gain
: 14 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz
ORDERING INFORMATION (PLAN)
Part Number
NE650R479A-T1
79A
Package
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R479A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IGF
IGR
PT
Tch
Tstg
Ratings
15
–7
0.6
12
12
2.5
150
–65 to +150
Unit
V
V
A
mA
mA
W
°C
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13671EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
1 page  
79A Package Dimensions (Unit: mm)
4.2 max.
Source
Gate
Drain
NE650R479A
Gate
1.5 ±0.2
Source
Drain
0.4 ±0.15
5.7 max.
79A Package Recommended P.C.B. Layout (Unit: mm)
4.0
1.7
Drain
0.8 max.
3.6 ±0.2
Bottom View
Stop up the hole with a rosin
or something to avoid solder
flow.
Gate
Source
0.5 0.5
6.1
through hole φ 0.2 × 33
Preliminary Data Sheet
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE650R479A.PDF ] | |
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