DataSheet26.com

NE6510179 PDF даташит

Спецификация NE6510179 изготовлена ​​​​«NEC» и имеет функцию, называемую «1 W L-BAND POWER GaAs HJ-FET».

Детали детали

Номер произв NE6510179
Описание 1 W L-BAND POWER GaAs HJ-FET
Производители NEC
логотип NEC логотип 

8 Pages
scroll

No Preview Available !

NE6510179 Даташит, Описание, Даташиты
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure
• High output power
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
• High linear gain
: GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
• High power added efficiency : 70% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
58% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
56% TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
ORDERING INFORMATION
Part Number
NE6510179A-T1
Package
79A
Supplying Form
12 mm wide embossed taping
Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE6510179A).
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13496EJ4V0DS00 (4th edition)
Date Published August 2000 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 2000









No Preview Available !

NE6510179 Даташит, Описание, Даташиты
NE6510179A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IGF
IGR
Ptot
Tch
Tstg
Ratings
8
–4
2.8
25
25
15
150
–65 to +150
Unit
V
V
A
mA
mA
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Condition
MIN.
TYP.
3.5
MAX.
5.5
5.0Note
+110
Unit
V
dB
°C
Note Recommended maximum Gain Compression is 3.0 dB at VDS > 4.2 V
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear GainNote 1
Symbol
IDSS
Vp
BVgd
Test Conditions
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, ID = 14 mA
Igd = 14 mA
Rth Channel to Case
Pout f = 1.9 GHz, VDS = 3.5 V,
ID Pin = +25 dBm, Rg = 100 ,
ηadd IDset = 200 mA (RF OFF)
GL Note 2
MIN.
–2.0
12
TYP.
2.4
MAX.
–0.4
Unit
A
V
V
31.5
50
5
32.5
0.72
58
10.0
8 °C/W
dBm
A
%
dB
Notes 1. Pin = 0 dBm
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2 Data Sheet P13496EJ4V0DS00









No Preview Available !

NE6510179 Даташит, Описание, Даташиты
NE6510179A
TYPICAL RF PERFORMANCE FOR REFERENCE
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Output Power
Drain Current
Power Added Efficiency
Linear GainNote
Symbol
Pout
ID
ηadd
GL
Test Conditions
f = 900 MHz, VDS = 3.5 V,
Pin = +20 dBm, Rg = 100 ,
IDset = 200 mA (RF OFF)
MIN.
TYP.
31.5
0.53
70
15.0
MAX.
Unit
dBm
A
%
dB
Note Pin = 0 dBm
TYPICAL RF PERFORMANCE FOR REFERENCE
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Output Power
Drain Current
Power Added Efficiency
Linear GainNote
Symbol
Pout
ID
ηadd
GL
Test Conditions
f = 1.9 GHz, VDS = 5.0 V,
Pin = +25 dBm, Rg = 100 ,
IDset = 200 mA (RF OFF)
MIN.
TYP.
35.0
1.2
56
10.0
MAX.
Unit
dBm
A
%
dB
Note Pin = 0 dBm
TYPICAL CHARACTERISTICS (TA = +25°C)
OUTPUT POWER, DRAIN CURRENT AND GATE CURRENT vs. INPUT POWER
35
VDS = 3.5 V
IDset = 200 mA (RF OFF)
Rg = 100
f = 1.9 GHz
30
8 1 500
6
Pout
25
1 000
4
20 ID 2
500
15 IG 0
10
0
5 10 15 20
Input Power Pin (dBm)
Remark The graph indicates nominal characteristics.
25
Data Sheet P13496EJ4V0DS00
–2
30
0
3










Скачать PDF:

[ NE6510179.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NE65101791 W L-BAND POWER GaAs HJ-FETNEC
NEC
NE6510179A1 W L-BAND POWER GaAs HJ-FETNEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск