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PDF NE6510179A Data sheet ( Hoja de datos )
| Número de pieza | NE6510179A | |
| Descripción | 1 W L-BAND POWER GaAs HJ-FET | |
| Fabricantes | NEC | |
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DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure
• High output power
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
• High linear gain
: GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
• High power added efficiency : 70% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
58% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
56% TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
ORDERING INFORMATION
Part Number
NE6510179A-T1
Package
79A
Supplying Form
• 12 mm wide embossed taping
• Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE6510179A).
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13496EJ4V0DS00 (4th edition)
Date Published August 2000 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 2000
1 page  
APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
VGS
Tantalum Condenser
47 µ F
Rg
1 000 p
VDS
NE6510179A
Tantalum Condenser
100 µF
λ /4 OPEN STUB
2
C1 3
3
INPUT
5
4
12
42
λ /4 LINE
54
λ /4 OPEN STUB
16 16
22
50 Ω LINE
3
6
3
2
39.5
3
5
C2
OUTPUT
f = 1.9 GHz
VDS = 3.5 V
IDset = 200 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
Rg = 100 Ω
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
VGS
VDS
Tantalum Condenser
47 µ F
Rg
1 000 p
GND
Substrate: Teflon glass (ε r = 2.6)
t = 0.8 mm
Tantalum Condenser
100 µF
2
C1
INPUT
λ /4 OPEN STUB
λ /4 LINE
λ /4 OPEN STUB
3 12
6
C4
2
2 1.5 11
26
51
4
4
R1 C6 2
C3 1.5
18 3
3 20
C5
5
6
2.5
2
C7
50 Ω LINE
31
C2 OUTPUT
2.5
3
f = 900 MHz
VDS = 3.5 V
IDset = 200 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
C3 = 30 pF
C4 = 3 pF
C5 = 8 pF
C6 = 8 pF
C7 = 4 pF
R1 = 30 Ω
Rg = 100 Ω
Data Sheet P13496EJ4V0DS00
GND
Substrate: Teflon glass (ε r = 2.6)
t = 0.8 mm
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE6510179A.PDF ] | |
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