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PDF NE6510379A Data sheet ( Hoja de datos )
| Número de pieza | NE6510379A | |
| Descripción | 3 W L-BAND POWER GaAs HJ-FET | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510379A
3 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET Structure
• High Output Power
: PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
• High Linear Gain
: GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty
GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty
• High Power Added Efficiency: 58% typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
52% typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
ORDERING INFORMATION (PLAN)
Part Number
Package
NE6510379A-T1 79A
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6510379A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IGF
IGR
PT
Tch
Tstg
Ratings
6
–4
4.2
38
38
18
150
–65 to +150
Unit
V
V
A
mA
mA
W
°C
°C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13677EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
© 1998
1 page  
79A Package Dimensions (Unit: mm)
4.2 max.
Source
Gate
Drain
NE6510379A
Gate
1.5 ±0.2
Source
Drain
0.4 ±0.15
5.7 max.
79A Package Recommended P.C.B. Layout (Unit: mm)
4.0
1.7
Drain
0.8 max.
3.6 ±0.2
Bottom View
Stop up the hole with a rosin
or something to avoid solder
flow.
Gate
Source
0.5 0.5
6.1
through hole φ 0.2 × 33
Preliminary Data Sheet
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE6510379A.PDF ] | |
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