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PDF NE651R479A Data sheet ( Hoja de datos )
| Número de pieza | NE651R479A | |
| Descripción | 0.4 W L-BAND POWER GaAs HJ-FET | |
| Fabricantes | NEC | |
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DATA SHEET
N-CHANNEL GaAs HJ-FET
NE651R479A
0.4 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear
gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure
• High output power
: Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm
Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
• High linear gain
: GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm
GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm
GL = 12.0 dB TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm
• High power added efficiency : 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm
60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
58 % TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
ORDERING INFORMATION
Part Number
NE651R479A-T1
Package
79A
Supplying Form
• 12 mm wide embossed taping
• Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE651R479A).
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13670EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998, 2000
1 page  
APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
VGS
Tantalum Condenser
47 µF
Rg
1 000 p
VDS
NE651R479A
Tantalum Condenser
100 µF
λ /4 OPEN STUB
2 C1 6
INPUT
3
5
43
λ /4 LINE
λ /4 OPEN STUB
12 5
6
33
5 2 2 7 2 8 12
C2
50 Ω LINE OUTPUT
f = 1.9 GHZ
VDS = 3.5 V
IDset = 50 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
Rg = 1 kΩ
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
VGS
Tantalum Condenser
47 µF
Rg
1 000 p
VDS
GND
Substrate: Teflon glass (ε r = 2.6)
t = 0.8 mm
Tantalum Condenser
100 µF
2
C1
INPUT
λ /4 OPEN STUB
λ /4 LINE
λ /4 OPEN STUB
5
3
9
3
R1
4 R2 4
C3
29 2
C4 C5
4
4
3
2 10
3
C6
13
5
50 Ω LINE
5
3
C2
C7
94
OUTPUT
f = 900 MHZ
VDS = 3.5 V
IDset = 50 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
C3 = 1 000 pF
C4 = 6 pF
C5 = 3 pF
C6 = 6 pF
C7 = 1 pF
R1 = 5.1 Ω
R2 = 30 Ω
Rg = 1 kΩ
Data Sheet P13670EJ2V0DS00
GND
Substrate: Teflon glass (ε r = 2.6)
t = 0.8 mm
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE651R479A.PDF ] | |
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