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NE68100 PDF даташит

Спецификация NE68100 изготовлена ​​​​«NEC» и имеет функцию, называемую «NECs NPN SILICON HIGH FREQUENCY TRANSISTOR».

Детали детали

Номер произв NE68100
Описание NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Производители NEC
логотип NEC логотип 

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NE68100 Даташит, Описание, Даташиты
NEC's NPN SILICON HIGH NE681
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
b e r s• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
P L E A S E N O T E : p a r t n u m12 dB at 2 GHz
n o t• LOW COST
00 (CHIP)
The fotlhloiswdinagtasfhoerent eawredefsoirgn.DESCRIPTION
f r o m e n d e d o f f i c eNEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
r e c o m m c a l l s a l e stions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
P l e a s euse a single matching point to simultaneously achieve both low
dNeEt a6 i8l1s 3: 5noise and high gain.
18 (SOT 343 STYLE)
35 (MICRO-X)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
AND MAG vs. FREQUENCY
MSG
VCE = 3 V, IC = 5 mA
20
3.0 MAG
2.0
1.0
0.5
GA
NF
1.0 2.0 3.0
Frequency, f (GHz)
10
0
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)









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NE68100 Даташит, Описание, Даташиты
NE681 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE68100
00 (CHIP)
UNITS MIN TYP MAX
NE68118
2SC5012
18
MIN TYP MAX
NE68119
2SC5007
19
MIN TYP MAX
NE68130
2SC4227
30
MIN TYP MAX
fT
NF
GNF
|S21E|2
hFE
ICBO
IEBO
CRE3
RTH (J-A)
PT
Gain Bandwidth Product at
VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
GHz
GHz
9.0
Noise Figure at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
1.6 2.3
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
12
Insertion Power Gain at
VCE = 8 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
dB 17
dB 9 11
Forward Current Gain2 at
VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
Collector Cutoff Current at
VCB = 10 V, IE = 0 mA
50 100 250
µA 1.0
Emitter Cutoff Current at
VEB = 1 V, IC = 0 mA
µA 1.0
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
pF 0.2 0.7
Thermal Resistance (Junction to Ambient) °C/W
80
Total Power Dissipation
mW 600
9.0
1.2 2.5
14
13 15
9
50 100 250
1.0
1.0
0.25 0.8
833
150
7.0 7.0
1.4 1.5
1.8 1.6
14 13.5
10 9
14 13
8 7.5
80 160 40 240
1.0 1.0
1.0 1.0
0.45 0.9
0.45 0.9
1000
100
833
150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
NF Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
GNF Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
|S21E|2
Insertion Power Gain at VCE = 8 V, IC = 20 mA,
f = 1 GHz
f = 2 GHz
hFE Forward Current Gain2 at VCE= 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA
UNITS
GHz
GHz
dB
dB
dB
dB
dB
dB
µA
NE68133
2SC3583
33
NE68135
2SC3604
35
NE68139/39R
2SC4094
39
MIN TYP MAX MIN TYP MAX MIN TYP MAX
9.0 9.0 9.0
1.2 2
1.6 2.3
1.2 2
13 13.5
12
11 12.5
79
11
15
8.5
50 100 250 50 100 250 50 100 200
1.0 1.0 1.0
IEBO
CRE3
RTH (J-A)
PT
Emitter Cutoff Current at VEB = 1 V, IC = 0 mA
Feedback Capacitance at
VCB = 10 V, IE = 0 mA, f = 1 MHz
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
µA
pF
°C/W
mW
1.0
0.35 0.9
625
200
1.0
0.2 0.7
590
295
1.0
0.25 0.8
625
200
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW 350 ms, duty cycle 2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.









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NE68100 Даташит, Описание, Даташиты
NE681 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage V
10
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 65
TJ Operating Junction
Temperature
°C 1502
TSTG Storage Temperature
°C -55 to +1503
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. TJ for NE68135 and NE68100 is 200°C.
3. Maximum storage temperature for the NE68135 is
-65 to +150°C.
NE68119
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
VCE = 2.5 V, IC = 0.3 mA
500 1.24 9.26 0.73 42 1.70
800 1.67 6.95 0.74 72 1.01
1000 2.18 6.02 0.70 90 0.78
VCE = 2.5 V, IC = 1 mA
500 0.97 13.86 0.66 43 0.46
800 1.19 9.12 0.59 48 0.35
1000
1.31 10.09
1500
1.71 7.99
VCE = 2.5 V, IC = 3 mA
500 0.92 17.19
800 1.02 14.23
1000
1.11 12.78
1500
1.42 10.30
2000
1.82 8.24
VCE = 3 V, IC = 5 mA
500 1.00 19.00
800 1.10 15.57
1000
1.19 13.91
1500
1.40 11.25
2000
1.70 9.08
2500
2.05 7.62
VCE = 8 V, IC = 7 mA
500 1.10 20.30
800 1.20 16.82
1000
1.30 15.10
1500
1.50 12.35
2000
1.77 10.21
2500
2.10 8.85
3000
2.40 7.86
0.56
0.50
0.49
0.40
0.38
0.39
0.36
0.37
0.31
0.30
0.33
0.32
0.36
0.36
0.28
0.28
0.28
0.28
0.33
0.44
89
131
39
68
87
134
165
43
71
89
139
166
-163
39
64
81
130
158
-166
-141
0.30
0.16
0.28
0.17
0.14
0.08
0.11
0.20
0.15
0.13
0.09
0.11
0.13
0.22
0.16
0.14
0.11
0.12
0.14
0.16
NE68100
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 8 V, IC = 7 mA
500 1.3 26.42
1000
1.45 20.54
2000
2.1 14.41
4000
3.25 7.76
ΓOPT
MAG ANG
0.20 91
0.20 148
0.22 178
0.42 -115
Rn/50
0.20
0.21
0.51
0.85
NE68130
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
(MHz)
(dB) (dB)
VCE = 2.5 V, IC = 0.3 mA
500 1.48 10.23
800 1.90 10.15
1000
2.15 9.00
1500
2.70 4.46
VCE = 2.5 V, IC = 1 mA
500 1.10 14.69
800
1000
1500
2000
2500
1.26 12.73
1.40 11.29
1.80 7.40
2.22 6.14
2.75 4.89
VCE = 2.5 V, IC = 3 mA
500 1.00 17.28
800 1.06 14.35
1000
1500
1.16 12.69
1.46 9.50
2000
2500
1.80 7.70
2.15 6.03
ΓOPT
MAG ANG
0.74 43
0.72 79
0.69 99
0.66 126
0.65 45
0.60 80
0.56 99
0.53 123
0.47 166
0.49 -166
0.47 44
0.44 83
0.43 100
0.39 130
0.35 177
0.35 -177
Rn/50
1.35
0.92
0.60
0.38
0.42
0.30
0.24
0.17
0.12
0.08
0.25
0.21
0.17
0.12
0.11
0.09
VCE = 8 V, IC = 7mA
500 1.30
1000
1.40
2000
1.80
3000
2.50
4000
3.60
20.34
13.96
8.56
5.64
4.50
0.29
0.25
0.25
0.48
0.67
50
84
155
-167
-135
0.27
0.18
0.16
0.10
0.20
NE68135
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
VCE = 8 V, IC = 7 mA
1000
1.1 17.33 0.28 71 0.22
2000
4000
1.6 13.60 0.37 160 0.15
3.4 9.25 0.51 -139 0.27










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Номер в каталогеОписаниеПроизводители
NE68100NECs NPN SILICON HIGH FREQUENCY TRANSISTORNEC
NEC

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