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NE68639R-T1 PDF даташит

Спецификация NE68639R-T1 изготовлена ​​​​«NEC» и имеет функцию, называемую «SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR».

Детали детали

Номер произв NE68639R-T1
Описание SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Производители NEC
логотип NEC логотип 

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NE68639R-T1 Даташит, Описание, Даташиты
SURFACE MOUNT NPN SILICON NE686
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz
|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
• LOW NOISE: 1.5 dB AT 2.0 GHz
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
b e r sDESCRIPTION
P L E A S E N O T E : p a r t n u mThe NE686 series of NPN epitaxial silicon transistors are
n o tdesigned for low voltage/low current, amplifier and oscillator
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .applications. NE686's high fT make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
f r o m t h i se n d e d f o r noef fwi c e f o r39(SOT143STYLE)
39R (SOT 143R STYLE)
r e c o m m c a l l s a l e sELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER1
EIAJ2 REGISTERED NUMBER
P l e a s ePACKAGE OUTLINE
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
d e t a i l s :fT
N E 6 8 6 3 0fT
NFMIN
N E 6 8 6 3 3NFMIN
N E 6 8 6 3 9|S21e|2
N E 6 8 6 3 9 R|S21e|2
hFE
Gain Bandwidth Product at
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 2V, IC =7 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC =5 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 2 V, IC = 7 mA
GHz 12 15.5
10 13
7.5 9
10 13
10.5 13.5
GHz 10 13
8.5 12
7 8.5
8.5 12
8.5 12
dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0
dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0
dB 10 12
8 10.5
7.5 9
7.5 9
9.5 11.5
dB 8.5 11
79
7 8.5
7 8.5
7.5 10.5
70 140 70
140 70
140 70
140 70
140
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
nA 100 100 100 100 100
CRE4 Feedback Capacitance at
VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.3 0.5 0.4 0.6 0.4 0.6 0.5 0.6 0.3 0.5
PT Total Power Dissipation
mW 30 30 30 30 30
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1250
833
625
625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW 350 µs, duty cycle 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories









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NE68639R-T1 Даташит, Описание, Даташиты
NE686 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO
Collector to Base Voltage
V
5
VCEO
VEBO
IC
TJ
TSTG
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Operating
Junction Temperature
Storage Temperature
V
V
mA
°C
°C
3
2
10
150
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
NE68618
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 1.0 V, IC = 1.0 mA
500 1.03 18.47 0.76 14 0.96
800 1.10 17.10 0.69 29 0.83
1000 1.15 14.81 0.66 34 0.78
1500 1.30 10.20 0.63 40 0.67
2000
1.52
7.97 0.58
50
0.58
2500
1.74
6.65 0.51
61
0.53
VCE = 1.0 V, IC = 3.0 mA
500 1.30 21.08 0.61 13 0.56
800 1.33 17.51 0.58 23 0.53
1000 1.36 15.75 0.55 28 0.52
1500 1.50 12.35 0.50 37 0.50
2000 1.67 10.03 0.46 45 0.48
2500
1.83
8.47 0.41
54
0.44
3000
1.98
7.30 0.36
64
0.33
VCE = 2.0 V, IC = 3.0 mA
500 1.30 21.96 0.61 13 0.66
800 1.33 18.38 0.58 23 0.58
1000 1.36 16.61 0.55 28 0.57
1500 1.50 13.20 0.50 37 0.55
2000 1.67 10.81 0.46 45 0.50
2500
1.83
9.22 0.41
54
0.47
3000
1.98
8.00 0.36
64
0.38
VCE = 2.0 V, IC = 10.0 mA
500 2.15 23.2 0.39 14 0.58
800 2.17 19.21 0.36 20 0.56
1000 2.20 17.52 0.32 27 0.55
1500 2.28 14.18 0.27 36 0.51
2000 2.42 11.81 0.24 45 0.48
2500 2.55 10.09 0.21 51 0.43
3000
2.70
8.78 0.17
61
0.29
NE68619
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 0.5 V, IC = 0.5 mA
500 0.96 15.00 0.76 16 1.20
800 1.03 12.50 0.76 30 1.13
1000 1.10 11.94 0.72 40 1.09
1500
1.42
6.69 0.67
48
1.10
VCE = 1.0 V, IC = 1.0 mA
500 0.91 17.59 0.73 14 1.09
800 1.00 15.38 0.69 28 0.82
1000 1.08 14.50 0.66 38 0.80
1500
1.35
9.78 0.63
46
0.78
2000
1.60
7.41 0.59
56
0.75
2500
1.80
6.15 0.53
70
0.68
VCE = 1.0 V, IC = 3.0 mA
500 1.35 20.29 0.63 15 0.59
800 1.38 16.88 0.60 28 0.55
1000 1.43 15.44 0.56 37 0.52
1500 1.55 11.50 0.53 43 0.51
2000
1.67
9.28 0.48
51
0.50
2500
1.78
7.70 0.44
62
0.47
3000
1.83
6.52 0.30
71
0.38
VCE = 1.0 V, IC = 5.0 mA
500 1.68 21.17 0.50 14 0.55
800 1.70 17.59 0.48 28 0.53
1000 1.74 15.74 0.46 33 0.52
1500 1.83 12.25 0.42 41 0.51
2000 1.91 10.00 0.38 53 0.49
2500
2.00
8.49 0.33
65
0.39
3000
2.09
7.30 0.28
77
0.35
VCE = 2.0 V, IC = 3.0 mA
500 1.35 21.12 0.63 15 0.68
800 1.38 17.80 0.60 28 0.62
1000 1.43 16.34 0.56 37 0.60
1500 1.55 12.36 0.53 43 0.58
2000 1.67 10.00 0.48 51 0.56
2500
1.78
8.48 0.44
62
0.50
3000
1.83
7.24 0.40
71
0.36









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NE68639R-T1 Даташит, Описание, Даташиты
TYPICAL PERFORMANCE CURVES (TA = 25°)
NE68618, NE68630
D.C. POWER DERATING CURVE
FREE AIR
100
50
0
0 50 100 150
Ambient Temperature, TA (°C)
NE68633, NE68639
D.C. POWER DERATING CURVE
FREE AIR
100
50
0
0 50 100 150
Ambient Temperature, TA (°C)
NE686 Series
NE68619
D.C. POWER DERATING CURVE
FREE AIR
100
50
0
0 50 100 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
180 µA
15 160 µA
140 µA
120 µA
10 100 µA
80 µA
60 µA
5 40 µA
IB = 20 µA
0
0 2.2 2.4 2.6
Collector to Emitter Voltage, VCE (V)










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Номер в каталогеОписаниеПроизводители
NE68639R-T1SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTORNEC
NEC

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