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NE68939-T1 PDF даташит

Спецификация NE68939-T1 изготовлена ​​​​«NEC» и имеет функцию, называемую «NPN Silicon Transistor».

Детали детали

Номер произв NE68939-T1
Описание NPN Silicon Transistor
Производители NEC
логотип NEC логотип 

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NE68939-T1 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR NE68939
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT:
24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,
Duty 1/8
• 4 PIN MINI MOLD PACKAGE: NE68939
DESCRIPTION
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/4 watt of power
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle.
These characteristics make it an ideal device for TX driver
stage in a 1.9 GHZ digital cordless telephone (DECT or PHS).
The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold
package and is available on tape and reel.
The NE68939 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
0.85
2
3
1.9
1
+0.10
0.6 -0.05
1.1+-00..21 0.8
4
1) Collector
2) Emitter
3) Base
4) Emitter
0.16
+0.10
-0.06
0 to 0.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
SYMBOLS
ICBO
IEBO
hFE
P-1
Gp
ηC
TON
PART NUMBER
PACKAGE CODE
PARAMETERS
Collector Cutoff Current, VCB = 5 V, IE = 0
Emitter Cutoff Current, VEB = 1 V, IC = 0
DC Current Gain, VCE = 3.6 V, IC = 100 mA
Output Power
Power Gain
Collector Efficiency
VCE = 3.6 V, f = 1.9 GHZ
ICq = 2 mA (Class AB)
Duty 1/8
Maximum Device On Time
UNITS
µA
µA
dBm
dB
%
MS
NE68939
39
MIN TYP MAX
2.5
2.5
30
24.5
6.5 8
50 62
10.0
California Eastern Laboratories









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NE68939-T1 Даташит, Описание, Даташиты
NE68939
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO
Collector to Base Voltage
V
9.0
VCEO
Collector to Emitter Voltage
V
6.0
VEBO
Emitter to Base Voltage
V 2.0
IC Collector Current mA
150
PT
Tj
TSTG
Total Power Dissipation
Junction Temperature
Storage Temperature
mW 200 (CW)
°C 150
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
APPLICATION
(1) TX Amplifier for DECT
+3 dBm
Po = 27 dBm
NE68839
NE68939
(2) TX Amplifier for PHS
-14 dBm
NE69039
P1 = 22 dBm
µPC2771T
NE68939
NE69039
OUTPUT POWER, COLLECTOR
EFFICIENCY, COLLECTOR CURRENT
AND POWER GAIN VS. INPUT
POWER
30
f = 1.9 GHZ, VCC = 3.6V
IC = 1mA (Duty 1/8)
25
Pout
20 80
ηC 60
15 40
IC 20
0
10 8
7
GP 6
5
5
4
30
20
10
0
5 10 15 20
25
Input Power, Pin (dBm)
TYPICAL DATA
f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8
P1dB
ηC
IC
GL
24.5
62
15
9.0
dbm
%
mA
db
OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
2.4
23
1.9
1.0
14
1.0
ORDERING INFORMATION
PART NUMBER
NE68939-T1
QTY
3K/REEL
Note:
1. Lead material: Cu
Lead plating: PbSn
ZIN (), ZOUT () DATA
j50
j25 j100
j10
ZIN
0
ZOUT
-j10
-j25
-j50
0
-j100
Z OUT
Z IN
IMPEDANCE LOOKING INTO DEVICE
VCC = 3.6 V, ICQ = I mA, CLASS AB
FREQUENCY
(GHZ)
ZIN
()
1.9 7.85+j5.62
0.9 3.1+j11.6
ZOUT
()
21.9-j11.6
5.3-j5.7
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
07/05/2000










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Номер в каталогеОписаниеПроизводители
NE68939-T1NPN Silicon TransistorNEC
NEC
NE68939-T1NPN Silicon TransistorNEC
NEC

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