NE71383B PDF даташит
Спецификация NE71383B изготовлена «NEC» и имеет функцию, называемую «L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET». |
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Детали детали
Номер произв | NE71383B |
Описание | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
Производители | NEC |
логотип |
16 Pages
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DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure
NF = 0.6 dB TYP. at f = 4 GHz
x High associated gain
Ga = 14 dB TYP. at f = 4 GHz
x Gate width: Wg = 280 Pm
x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER
NE71300-N
NE71300-M
NE71300-L
NE71383B
I DSS (mA)
20 to 50
50 to 80
80 to 120
20 to 120
PACKAGE CODE
00 (CHIP)
83B
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDS
5.0
Gate to Source Voltage
VGSO
ð5.0
Gate to Drain Voltage
VGDO
ð6.0
Drain Current
ID IDSS
Total Power Dissipation
Ptot
270
400
Channel Temperature
Tch
175
Storage Temperature
Tstg ð65 to +175
V
V
V
mA
mW
mW
°C
°C
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
[NE71383B]
[NE71300]
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
3
10
MAX.
4
30
15
Unit
V
mA
dBm
Document No. P11691EJ2V0DS00 (2nd edition)
Date Published February 1997 N
Printed in Japan
© 1996
No Preview Available ! |
NE713
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Output Power at 1 dB Gain
Compression Point
Thermal Resistance
SYMBOL
IGSO
IDSS
VGS (off)
gm
NF
Ga
NF
Ga
Po (1 dB)
Rth
MIN.
−
20
−0.5
20
11.5
8.0
TYP.
1.0
40
−1.1
50
0.6
14.0
1.6
9.5
14.5
MAX.
10
120
−3.5
−
0.7
1.8
190
450
UNIT
µA
mA
V
mS
dB
dB
dB
dB
dBm
°C/W
°C/W
TEST CONDITIONS
VGS = −5 V
VDS = 3 V, VGS = 0 V
VDS = 3 V, ID = 100 µA
VDS = 3 V, ID = 10 mA
f = 4 GHz VDS = 3 V
ID = 10 mA
f = 12 GHz
f = 12 GHz VDS = 3 V
ID = 30 mA
NE71300 Channel to case
NE71383B
PACKAGE DIMENSIONS (Unit : mm) [NE71383B]
1.88 ± 0.3
1
4.0 MIN.
2
4.0 MIN.
4
3
1.0 ± 0.1
1. Source
2. Drain
3. Source
4. Gate
2
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CHIP DIMENSIONS (Unit: µm) [NE71300]
123 64
450
76
60
Drain
Drain
NE713
Source
Gate
Gate
Source
18 48
57 56
Thickness = 140 µm
: BONDING AREA
44 52
3
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