NE72218-T1 PDF даташит
Спецификация NE72218-T1 изготовлена «NEC» и имеет функцию, называемую «C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET». |
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Детали детали
Номер произв | NE72218-T1 |
Описание | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
Производители | NEC |
логотип |
12 Pages
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DATA SHEET
C to X BAND AMPLIFIER
C to X BAND OSC
N-CHANNEL GaAs MES FET
GaAs MES FET
NE72218
FEATURES
• High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz
• Gate length
: Lg = 0.8 µm
• Gate width
: Wg = 400 µm
• 4-pin super minimold package
• Tape & reel packaging only available
ORDERING INFORMATION
Part Number
NE72218-T1
NE72218-T2
Package
4-pin super minimold
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
• Qty 3 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE72218).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
Ptot
Tch
Tstg
Ratings
5.0
−5.0
IDSS
250
125
−65 to +125
Unit
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12750EJ3V0DS00 (3rd edition)
Date Published August 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1997, 2000
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NE72218
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Phase Noise
Power Gain
Output Power at 1 dB Gain
Compression Point
Symbol
Test Conditions
IGSO VGS = −5 V
IDSS VDS = 3 V, VGS = 0 V
VGS (off) VDS = 3 V, ID = 100 µA
gm VDS = 3 V, ID = 30 mA
PN VDS = 3 V, ID = 30 mA, f = 11 GHz,
100 kHz offset
VDS = 3 V, ID = 30 mA, f = 11 GHz,
10 kHz offset
GS VDS = 3 V, ID = 30 mA, f = 12 GHz
PO (1 dB) VDS = 3 V, ID = 30 mA, f = 12 GHz
IDSS CLASSIFICATION
Rank
57
58
59
IDSS (mA)
30 to 120
65 to 120
30 to 75
Marking
V57
V58
V59
MIN.
−
30
−0.5
20
−
TYP.
1.0
60
−2.0
45
−110
MAX.
10
120
−4.0
−
−
Unit
µA
mA
V
mS
dBc/Hz
− −90 − dBc/Hz
− 4.5 − dB
− 15.0 − dBm
2 Data Sheet P12750EJ3V0DS00
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NE72218
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
400 80
VGS = 0 V
300 60
200
100
0 50 100 150 200 250
Ambient Temperature TA (˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 3 V
80
40
–0.5 V
20
–1.0 V
0 12345
Drain to Sourcr Voltage VDS (V)
60
40
20
0
–4.0
–2.0
Gate to Source Voltage VGS (V)
0
Remark The graphs indicate nominal characteristics.
Data Sheet P12750EJ3V0DS00
3
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Номер в каталоге | Описание | Производители |
NE72218-T1 | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET | NEC |
NE72218-T2 | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET | NEC |
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