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PDF NE73435 Data sheet ( Hoja de datos )
| Número de pieza | NE73435 | |
| Descripción | NPN SILICON GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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NPN SILICON GENERAL NE734
PURPOSE TRANSISTOR SERIES
FEATURES
• LOW NOISE FIGURE: < 3 dB at 500 MHz
• HIGH GAIN: 15 dB at 500 MHz
• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz
(3 GHz for the NE73435)
• SMALL COLLECTOR CAPACITANCE: 1 pF
• HIGH RELIABILITY METALLIZATION
DESCRIPTION
The NE734 series of NPN silicon general purpose UHF tran-
sistors provide the designer with a wide selection of reliable
transistors for high speed logic and wide-band low noise
amplifier applications. The series uses NEC's highly reliable
platinum-silicide, titanium, platinum, and gold metallization
system to assure uniform performance and reliability. The
30 (SOT 323 STYLE)
35 (MICRO-X)
NE73433 is in the plastic Mini-Mold package designed for
high-speed automated assembly operations for large volume
hybrid ICs. For hybrid MIC applications requiring more perfor-
mance, the NE73435 is recommended. This device is pack-
aged in the economical metal-ceramic, hermetic Micro-X pack-
age.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NFMIN
MAG
|S21E|2
hFE
ICBO
IEBO
CCB
PT
RTH
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 5 mA
Minimum Noise Figure2 at
VCE = 10 V, IC = 3 mA, f = 0.5 GHz
VCE = 10 V, IC = 5 mA, f = 0.9 GHz
Maximum Available Gain3 at
VCE = 10 V, IC = 10 mA, f = 0.5 GHz
f = 1 GHz
Insertion Power Gain at VCE = 10 V, IC = 10 mA,
f = 0.5 GHz
f = 1 GHz
Forward Current Gain Ratio at
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 5 mA
Collector Cutoff Current at VCB = 15 V, IE = 0
Emitter Cutoff Current at VEB = 2 V, IC = 0
Collector to Base Capacitance4 at
VCB = 10 V, IC = 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Case)
UNITS
GHz
GHz
dB
dB
dB
dB
dB
dB
µA
µA
pF
mW
°C/W
NE73430
2SC4185
30
MIN TYP MAX
2.3
4.0
17
8
40 100 180
0.1
1.5 0.75
150
833
NE73435
2SC2148
35
MIN TYP MAX
1.5 3.0
2.1 3.5
18
13
16
89
25 100 200
0.1
0.1
.55 1.5
250
550
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Maximum Available Gain (MAG) is calculated
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the
guard terminal.
California Eastern Laboratories
1 page  
OUTLINE DIMENSIONS (Units in mm)
OUTLINE 30
(SOT-323)
2.1 ± 0.2
1.25 ± 0.1
2.0 ± 0.2
0.65
1.3
2
1
0.15
0.9 ± 0.1
0.3
+0.1
-0.05
3 (ALL LEADS)
MARKING
1. Emitter
2. Base
3. Collector
0 to 0.1
+0.10
0.15 -0.05
PACKAGE OUTLINE 35
(MICRO-X)
0.5±0.06
C
E
3.8 MIN
ALL LEADS
B
+0.06
0.1 -0.04
E
2.55±0.2
φ2.1
45˚
1. Collector
2. Emitter
3. Base
4. Emitter
1.8 MAX
0.55
NE734 SERIES
PACKAGE OUTLINE 30
RECOMMENDED P.C.B. LAYOUT
1.7
2
0.6
1
0.8
3
1.3
0.65
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
06/21/2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet NE73435.PDF ] | |
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