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NE76084 PDF даташит

Спецификация NE76084 изготовлена ​​​​«NEC» и имеет функцию, называемую «C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET».

Детали детали

Номер произв NE76084
Описание C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
Производители NEC
логотип NEC логотип 

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NE76084 Даташит, Описание, Даташиты
DATA SHEET
GaAs MES FET
NE76084
C to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
FEATURES
• Low noise figure & High associated gain
NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz
• Gate length: Lg = 0.3 µm
• Gate width : Wg = 280 µm
ORDERING INFORMATION
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ± 0.2
1
L
L
SUPPLYING
PART NUMBER
FORM
LEAD LENGTH MARKING
NE76084-SL STICK
L = 1.7 mm MIN.
E
NE76084-T1
Tape & reel
L = 1.0 ± 0.2 mm
1000 pcs./reel
NE76084-T1A Tape & reel
L = 1.0 ± 0.2 mm
5000 pcs./reel
E
2
4
L
3
L
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDS 5.0 V
Gate to Source Voltage VGS
–3.0
V
Gate to Drain Voltage
VGD
–5.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation Ptot
240 mW
Channel Temperature
Tch
175 °C
Storage Temperature
Tstg –65 to +175 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
1. Source
2. Drain
3. Source
4. Gate
PART NUMBER
NE76084
NE76084-2.4
PACKAGE CODE
84 84 UNIT TEST CONDITIONS
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX.
Gate to Source Leak Current IGSO
10 10 µA VGS = –4 V
Saturated Drain Current
IDSS
15 30 50 15 30 50 mA VDS = 3 V, VGS = 0 V
Gate to Source Cutoff Voltage VGS(off) –0.5 –0.8 –3.0 –0.5 –0.8 –3.0 V VDS = 3 V, IDS = 100 µA
Transconductance
gm 30 40 70 30 40 70 mS VDS = 3 V, IDS = 10 mA
Noise Figure
NF
1.6 1.8
1.8 2.4 dB VDS = 3 V, IDS = 10 mA
Associated Gain
Ga 8.0 9.0
8.0 9.0
dB f = 12 GHz
Document No. P11843EJ2V0DS00 (2nd edition)
(Previous No. TC-2259)
Date Published August 1996 P
Printed in Japan
© 1989









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NE76084 Даташит, Описание, Даташиты
NE76084
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
40
VGS = 0 V
200
30
–0.2 V
20
100
–0.4 V
10
–0.6 V
0 50 100 150 200
TA-Ambient Temperature-°C
0 12345
VDS-Drain to Source Voltage-V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 3 V
40
30
TYPICAL GAIN vs. FREQUENCY
24
VDS = 3 V
ID = 10 mA
20
MSG.
16
12 MAG.
20
S21s2
8
10
0
–2.0
–1.0
VGS-Gate to Source Voltage-V
0
0
12
4 6 8 10
20
f-Frequency-GHz
Gain Calculations
|S21|
MSG. =
|S12|
|S21|
MAG. =
(K ±
K2 – 1)
|S12|
1 + ||2 – |S11|2 – |S22|2
K=
2 |S12| |S21|
= S11·S22 – S21·S12
2









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NE76084 Даташит, Описание, Даташиты
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
VDS = 3 V
ID = 10 mA
24
20
3.0
Ga
2.0
16
12
1.0
0
1
8
NF
4
2 4 6 8 10 14 20 30
f-Frequency-GHz
NE76084
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
2.5
15
VDS = 3 V
f = 12 GHz
2.0
Ga
10
NF
1.5
5
0 5 10 15 20 25
ID-Drain Current-mA
3










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