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NE85618 PDF даташит

Спецификация NE85618 изготовлена ​​​​«NEC» и имеет функцию, называемую «NECs NPN SILICON HIGH FREQUENCY TRANSISTOR».

Детали детали

Номер произв NE85618
Описание NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Производители NEC
логотип NEC логотип 

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NE85618 Даташит, Описание, Даташиты
NEC's NPN SILICON HIGH NE856
FREQUENCY TRANSISTOR SERIES
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
LOW NOISE FIGURE:
1.1 dB at 1 GHz
HIGH COLLECTOR CURRENT: 100 mA
HIGH RELIABILITY METALLIZATION
LOW COST
00 (CHIP)
35 (MICRO-X)
P L E A S E N O T E : part numbenrostDESCRIPTION
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
t h i s f o r n e wwide dynamic range and excellent linearity. The NE856 series
f o roffers excellent performance and reliability at low cost. This is
f r o m e n d e d o f f i c eachieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
r e c o m m c a l l s a l e spackage for high frequency applications. It is also available in
several low cost plastic package styles.
Pdleetaasiel s :NE85600
N E 8 5 6 3 5NOISE FIGURE AND GAIN
vs. FREQUENCY
VCC = 10 V, IC 7 mA
32 (TO-92)
18 (SOT 343 STYLE)
34 (SOT 89 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
4.0 20
MSG
3.5 GA
15
MAG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
3.0 10
2.5 5
NFMIN
2.0
1.5
1.0
0.4 0.5
1.0 2 3
Frequency, f (GHz)
45
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories









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NE85618 Даташит, Описание, Даташиты
NE856 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE85600
00 (CHIP)
NE85618
2SC5011
18
NE85619
2SC5006
19
NE85630
2SC4226
30
NE85632
2SC3355
32
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
GHz
7.0
6.5
6.5
VCE = 3 V, IC = 7 mA
GHz
3.0 4.5
4.5
NF Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
1.1
1.4
1.4
1.3
1.4
VCE = 10 V, IC = 7 mA, f = 2 GHz
dB
2.1
2.1
2.2
2.2
GA
|S21E|2
hFE
Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
dB
dB 10
13 12.5 12
7 6.5 6
10
dB 11 13 12 12 9.5
dB 7 9
7
6
50 120 300 50 120 300
50 120 300
80 120 160 40 110 250
ICBO Collector Cutoff Current
at VCB = 15 V, IE = 0 mA
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
Cre Feedback Capacitance3 at
VCB = 3 V, IE = 0 mA, f = 1 MHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
µA
µA
pF
pF
1.0
1.0
0.5 1.0
1.0
1.0
0.5 0.9
1.0
1.0
0.7 1.5
1.0
1.0
0.7 1.5
1.0
1.0
0.65 1.0
PT Total Power Dissipation
mW 700 150 100 150 600
RTH (J-A) Thermal Resistance (J-A)
°C/W
833 1000 833
210
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE85633
2SC3356
33
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
GHz
7.0
NF Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
dB
dB
1.4 2.0
GA Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
dB
dB
9
|S21E|2
Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
dB
dB
11.5
hFE Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
50 120 300
ICBO
Collector Cutoff Current
at VCB = 15 V, IE = 0 mA
µA
1.0
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA µA 1.0
Cre Feedback Capacitance3 at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.55 1.0
PT Total Power Dissipation mW 200
RTH (J-A) Thermal Resistance (J to A)
°C/W
625
NE85634
2SC3357
34
MIN TYP MAX
6.5
1.4
9.5
50 120 300
1.0
1.0
0.65 1.0
20004
62.54
NE85635
2SC3603
35
MIN TYP MAX
7.0
2.1 3.4
10
79
50 120 300
1.0
1.0
0.5 1.0
580
590
NE85639/39R
2SC4093
39
MIN TYP MAX
9.0
1.5 2.1
13.5
8.5
13
7
50 120 300
1.0
1.0
0.5 0.9
200
500
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width 350 µs, duty cycle 2% pulsed.
3. Cre measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
4. With 2.5 cm2 x 0.7 mm ceramic substrate (infinite heatsink).









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NE85618 Даташит, Описание, Даташиты
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
VCBO
Collector to Base Voltage
VCEO Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC Collector Current
TJ Junction Temperature
TSTG
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
20
12
3.0
100
1502
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Maximum TJ for the NE85600 and NE85635 is 200°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE85633 AND NE85635
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
NE85635
200
NE85633
100
0
0 50 100 150 200
Ambient Temperature, TA (°C)
COLLECTOR TO BASE
CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
5.0
3.0
2.0
1.0 NE85634
0.7
NE85632/
0.5 33
NE85635
0.3
0.2
0.1
1
2 3 5 7 10
20 30 50
Collector to Base Voltage, VCB (V)
NE856 SERIES
NE85632 AND NE85634
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2.4
2.0
Aluminum
Heat Sink
for NE85632
1.6
NE85634
Ceramic Substrate
2.5 cm2 X 0.7 mm
RTH (J-A) = 62.5˚C/W
10
1.2
3.8
0.8 NE85632
Free Air
7.8
NE85632
with Heat
Sink
0.4
NE85634
Free Air
0
0 50 100
Ambient Temperature, TA (°C)
150
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500
VCE = 10 V
300
200
100
70
50
30
20
10
1
2 3 5 7 10
20 30 50
Collector Current, IC (mA)










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