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NE960R275 PDF даташит

Спецификация NE960R275 изготовлена ​​​​«NEC» и имеет функцию, называемую «0.2 W X / Ku-BAND POWER GaAs MES FET».

Детали детали

Номер произв NE960R275
Описание 0.2 W X / Ku-BAND POWER GaAs MES FET
Производители NEC
логотип NEC логотип 

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NE960R275 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically
sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control
procedures.
FEATURES
• High Output Power
: Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain
: 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
NE960R200
NE961R200
NE960R275
Package
00 (CHIP)
75
Supplying Form
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R200, NE960R275, NE961R200)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13775EJ2V0DS00 (2nd edition)
Date Published July 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999









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NE960R275 Даташит, Описание, Даташиты
NE960R2 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IGF
IGR
PT
Tch
Tstg
Ratings
15
–7
0.35
+2.5
–2.5
2.5 (2.1Note)
175
–65 to +175
Unit
V
V
A
mA
mA
W
°C
°C
Note NE961R200
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Condition
MIN.
TYP.
9.0
MAX.
9.0
3.0
+130
Unit
V
dB
°C
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Unless otherwise specified, using NEC standard test fixture.)
Parameter
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Symbol
IDSS
Vp
BVgd
Test Conditions
VDS = 1.5 V, VGS = 0 V
VDS = 2.5 V, ID = 1 mA
Igd = 1 mA
Rth Channel to Case
MIN.
0.09
–2.5
15
Output Power at Pin = +15 dBm
Output Power at 1 dB Gain
Compression Point
Power Added Efficiency at
PO (1dB)
Linear Gain
Pout
Po (1 dB)
η add
f = 14.5 GHz, VDS = 9.0 V
Rg = 1 k
IDset = 90 mA (RF OFF)
GL
22.0
8.0
TYP.
0.2
–1.8
24.0
25.0
35
10.0
MAX.
0.35
–0.5
Unit
A
V
V
60
(70Note)
°C/W
dBm
dBm
%
dB
Note NE961R200
Remark DC and RF performance is 100 % testing.
2 Preliminary Data Sheet P13775EJ2V0DS00









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NE960R275 Даташит, Описание, Даташиты
NE960R2 SERIES
TYPICAL CHARACTERISTICS (TA = +25°C)
OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER
30 60
25 45
20 30
15
10
5
200
150
100
50
0
5
1.5
1.0
0.5
0.0
–0.5
5
f = 14.5 GHz (1 tone),
VDS = 9 V, IDset = 90 mA
Rg = 1 k
10 15
Input Power Pin (dBm)
20
DRAIN CURRENT AND GAIN vs. INPUT POWER
10 15
Input Power Pin (dBm)
20
GATE CURRENT vs. INPUT POWER
15
0
25
14
12
10
8
6
25
10 15
Input Power Pin (dBm)
20
Preliminary Data Sheet P13775EJ2V0DS00
25
3










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