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PDF NES1823P-100 Data sheet ( Hoja de datos )
| Número de pieza | NES1823P-100 | |
| Descripción | 100W L-BAND PUSH-PULL POWER GaAs MESFET | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
N-CHANNEL GaAs MESFET
NES1823P-100
100W L-BAND PUSH-PULL POWER GaAs MESFET
DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for
IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride
passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power : 100 W TYP.
• High Linear Gain : 11.0 dB TYP.
• High Drain Efficiency : 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
Package
NES1823P-100
T-92
Supplying Form
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-100)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
ID
IG
PT
Tch
Tstg
Ratings
15
–7
76
440
220Note
175
–65 to +175
Unit
V
V
A
mA
W
°C
°C
Note TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13839EJ1V0DS00 (1st edition)
Date Published November 1998 N CP(K)
Printed in Japan
© 1998
1 page  
NES1823P-100
DISTORTION MATCHING
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
55 80
50 70
Pout
45 60
ηD
40 50
35 40
30 30
25 20
ID
20 10
15 0
10
20
–10
25 30 35 40 45
Input Power Pin (dBm)
VDS = 10 V
f = 2.12 GHz
Rg = 12.5 Ω
IDset = 6 A
IDset = 8 A
IDset = 10 A
Preliminary Data Sheet
5
5 Page 
NES1823P-100
CIRCUIT DESIGN
The matching circuit of package inside consists of bond-wire, chip-capacitor and microstrip line on the alumina
substrate. The package-lead impedance is designed as 25 Ω connecting to the external matching circuit, in the
external circuit design, the microstrip line impedance is 25 Ω, conjugate with package impedance, then the
impedance is connected to balun, it is 1:2 balun structure, finally connected to 50 Ω. Balun technology has some
advantage over single-ended device, minimize matching-loss with decrease of impedance change ratio and cancel
the even mode harmonic frequency for IM3 performance. The balun circuit is employed for this product.
BALUN DESIGN
The balun design is the key for these high power push-pull structure device. NEC designed low insertion loss
microstrip balun for this product. What is the reason of our choice? One is the repeatability of assembly, and the
other is its performance. Microstrip balun performance tolerance is small because of its simple structure. So the
balun performance is stable and repeatable between NEC and customers. And its insertion loss is 0.2 dB less than
coaxial balun 0.3 dB, also Its band width is better than coaxial balun. The microstrip balun is consists of microstrip
pattern and cavity, therefore its insertion loss and band width due to its parameter design. Those parameters are
optimized with simuration. : (substrate duroid ε r = 2.2 t = 0.8 mm)
Then the phase difference between two ports is 180° ±4, insertion loss is 0.2 dB from 1 to 3 GHz.
DC STABILITY (AVOID OSCILLATION)
The function of DC-cut capacitor arranged between transformer and microstrip balun is avoid DC oscillation.
When the gate is pinch-off, a few pinch-off voltage (VP) difference of each port occur the loop current, then start DC
oscillation in the area of pinch-off. Because of this reasons, the DC-cut capacitor is need to this microstrip balun
assemble. Additionally, the ground of transformer substate is effective to DC oscillation, so that five screws are
arranged at the middle of substrate.
Preliminary Data Sheet
11
11 Page | ||
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| PDF Descargar | [ Datasheet NES1823P-100.PDF ] | |
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