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NES1823P-140 PDF даташит

Спецификация NES1823P-140 изготовлена ​​​​«NEC» и имеет функцию, называемую «140 W L / S-BAND PUSH-PULL POWER GaAs MES FET».

Детали детали

Номер произв NES1823P-140
Описание 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
Производители NEC
логотип NEC логотип 

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NES1823P-140 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-140
140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications
for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with
high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8
to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere
from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon
dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• VDS = 12.0 V operation
• High output power: Pout = 140 W TYP.
• High linear gain: GL = 11 dB TYP.
• High power added efficiency: ηadd = 43 % TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 2.20 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-140
Package
T-92
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14751EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
©
2000









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NES1823P-140 Даташит, Описание, Даташиты
NES1823P-140
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
VGDO
ID
IG
P Note
tot
Tch
Tstg
Ratings
19
7
22
76
440
270
175
65 to +175
Unit
V
V
V
A
mA
W
°C
°C
Note TC = +25 °C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Symbol
Test Conditions
VDS
Gcomp
Tch
IDset
R Note
g
VDS = 12.0 V, RF OFF
MIN.
TYP.
6.0
MAX.
12.0
3.0
+150
6.0
12.5
Unit
V
dB
°C
A
Note Rg is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Symbol
Test Conditions
IDSS VDS = 2.5 V, VGS = 0 V
Vp VDS = 2.5 V, ID = 330 mA
Rth Channel to Case
Pout
ID
ηadd
G Note2
L
f = 2.20 GHz, VDS = 12.0 V,
Pin = 43.5 dBm, Rg = 12.5 ,
IDset = 6.0 A Total (RF OFF) Note1
MIN.
4.0
50.5
9
TYP.
76.0
2.6
0.4
51.5
22.0
43
11
MAX.
0.55
Unit
A
V
°C/W
dBm
A
%
dB
Notes 1. IDset = 3.0 A each drain
2. Pin = 25 dBm
2 Preliminary Data Sheet P14751EJ1V0DS00









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NES1823P-140 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = +25 °C)
OUTPUT POWER,
POWER ADDED EFFICIENCY vs.
INPUT POWER [Power Matched]
55
VDS = 12.0 V
f = 2.20 GHz (1 tone)
50
Pout
60
50
45
IDset = 6 A (each drain)
40
4 A (each drain)
2 A (each drain)
40
30
35
30
25
15
6 A (each drain) 20
4 A (each drain)
2 A (each drain)
ηadd
10
0
20 25 30 35 40 45
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
NES1823P-140
3RD ORDER INTERMODULATION
DISTORTION vs. 2 TONES OUTPUT
POWER [Distortion Matched]
–10
–15
VDS = 12.0 V
f = 2.20/2.22 GHz (2 tones)
–20
–25
IDset = 2 A (each drain)
–30
IM3
–35
–40
–45
4 A (each drain)
6 A (each drain)
–50
–55
–60
20 25 30 35 40 45 50
2 tones Output Power Pout (dBm)
Preliminary Data Sheet P14751EJ1V0DS00
3










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