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NES1823P-30 PDF даташит

Спецификация NES1823P-30 изготовлена ​​​​«NEC» и имеет функцию, называемую «30 W L-S BAND PUSH-PULL POWER GaAs MES FET».

Детали детали

Номер произв NES1823P-30
Описание 30 W L-S BAND PUSH-PULL POWER GaAs MES FET
Производители NEC
логотип NEC логотип 

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NES1823P-30 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-30
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs
0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• High output power
: 30 W TYP.
• High linear gain
: 13 dB TYP.
• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
Package
NES1823P-30
T-86
Supplying Form
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-30)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
VGDO
ID
IG
PT
Tch
Tstg
Ratings
15
–7
–18
27
180
90Note
175
–65 to +175
Unit
V
V
V
A
mA
W
°C
°C
Note TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14491EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
©
1999









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NES1823P-30 Даташит, Описание, Даташиты
NES1823P-30
RECOMMENDED OPERATING LIMITS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate ResistanceNote
Symbol
VDS
Gcomp
Tch
IDset
Rg
Test Condition
VDS = 10 V, RF OFF
MIN.
Note Rg is the series resistance between the gate supply and FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain Note 1
3rd order Intermodulation
Distortion
Symbol
IDSS
Vp
Rth
Pout
ID
ηadd
GL
IM3
Test Conditions
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, ID = 80 mA
Channel to Case
f = 2.2 GHz, VDS = 10 V
Pin = +36 dBm, Rg = 30
IDset = 4.0 A Total (RF OFF)Note 2
f = +5 MHz,
Pout = 37 dBm (2-tone total)
MIN.
–4.0
44.0
11
Notes 1. Pin = +20 dBm
2. IDset = 2.0 A each drain
TYP.
TYP.
18.0
–2.6
1.3
45.0
7
40
13
–40
MAX.
10.0
3.0
+150
5.0
30
Unit
V
dB
°C
A
MAX.
1.7
9
Unit
A
V
°C/W
dBm
A
%
dB
dBc
2 Preliminaly Data Sheet P14491EJ1V0DS00









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NES1823P-30 Даташит, Описание, Даташиты
NES1823P-30
TYPICAL CHARACTERISTICS (TA = +25°C)
OUTPUT POWER AND POWER ADDED EFFICIENCY
vs. INPUT POWER
50
VDS = 10 V IDset = 4.0 A Rg = 30
f = 2.2 GHz
f = 5 MHz
45
100
Pout
80
40 60
ηadd
35 40
30 20
25
15
20 25 30 35
Input Power Pin (dBm)
0
40
3RD INTERMODULATION DISTORTION
vs. 2 TONE OUTPUT POWER
0
VDS = 10 V IDset = 4.0 A Rg = 30
f = 2.2 GHz
–10 f = 5 MHz
–20
–30
–40
–50
–60
30
35 40
2 Tone Output Power 2tonePout (dBm)
45
Preliminaly Data Sheet P14491EJ1V0DS00
3










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Номер в каталогеОписаниеПроизводители
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NEC

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