DataSheet26.com

NES1823P-50 PDF даташит

Спецификация NES1823P-50 изготовлена ​​​​«NEC» и имеет функцию, называемую «50 W L-BAND PUSH-PULL POWER GaAs MES FET».

Детали детали

Номер произв NES1823P-50
Описание 50 W L-BAND PUSH-PULL POWER GaAs MES FET
Производители NEC
логотип NEC логотип 

8 Pages
scroll

No Preview Available !

NES1823P-50 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-50
50 W L-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high
linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different
matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device
employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior
performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• High output power: Pout = 50 W TYP.
• High linear gain: GL = 10.5 dB TYP.
• High power added efficiency: ηadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-50
Package
T-86
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14996EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
©
2000









No Preview Available !

NES1823P-50 Даташит, Описание, Даташиты
NES1823P-50
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGSO
VGDO
ID
IG
P Note
tot
Tch
Tstg
Ratings
15
7
18
30
200
110
175
65 to +175
Unit
V
V
V
A
mA
W
°C
°C
Note TC = +25 °C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Symbol
Test Conditions
VDS
Gcomp
Tch
IDset
R Note
g
VDS = 10.0 V, RF OFF
MIN.
TYP.
4.0
MAX.
10.0
3.0
+150
7.0
20
Unit
V
dB
°C
A
Note Rg is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
Symbol
Test Conditions
IDSS VDS = 2.5 V, VGS = 0 V
Vp VDS = 2.5 V, ID = 130 mA
Rth Channel to Case
Pout
ID
ηadd
G Note 2
L
IM3
f = 2.20 GHz, VDS = 10.0 V,
Pin = 39.5 dBm, Rg = 20 ,
IDset = 4.0 A Total (RF OFF) Note 1
f = 5 MHz,
Pout = 39 dBm (2 tones total)
MIN.
4.0
46.0
9.5
TYP.
30.0
2.6
1.0
47.0
12.5
40
10.5
36
MAX.
1.5
16.0
Unit
A
V
°C/W
dBm
A
%
dB
dBc
Notes 1. IDset = 2.0 A each drain
2. Pin = 22 dBm
2 Preliminary Data Sheet P14996EJ1V0DS00









No Preview Available !

NES1823P-50 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = +25 °C)
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
50 70
45
Pout
40
60
50
35
30
25
20
15
ηadd
40
30
VDS = 10.0 V
f = 2.20 GHz (1 tone) 20
IDset = 4.0 A (RF OFF)
Rg = 20
10
20 25 30 35 40 45
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
NES1823P-50
DRAIN CURRENT, GATE CURRENT
vs. INPUT POWER
14
VDS = 10.0 V
12
f = 2.20 GHz (1 tone)
IDset = 4.0 A (RF OFF)
Rg = 20
10
ID
80
60
40
8 20
60
4 –20
IG
2 –40
0 –60
15 20 25 30 35 40 45
Input Power Pin (dBm)
Preliminary Data Sheet P14996EJ1V0DS00
3










Скачать PDF:

[ NES1823P-50.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NES1823P-5050 W L-BAND PUSH-PULL POWER GaAs MES FETNEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск