DataSheet26.com

NESG3031M05 PDF даташит

Спецификация NESG3031M05 изготовлена ​​​​«NEC» и имеет функцию, называемую «NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR».

Детали детали

Номер произв NESG3031M05
Описание NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
Производители NEC
логотип NEC логотип 

3 Pages
scroll

No Preview Available !

NESG3031M05 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG3031M05
FEATURES
LOW NOISE FIGURE AND HIGH-GAIN
NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
M05 PACKAGE:
Flat-lead 4 pin thin-type super minimold package
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG3031M05
NESG3031M05-T1
50 pcs (Non reel)
3 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales ofce.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
12.0
4.3
1.5
35
150
150
65 to +150
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
UNIT
V
V
V
mA
mW
°C
°C
California Eastern Laboratories









No Preview Available !

NESG3031M05 Даташит, Описание, Даташиты
NESG3031M05
ELECTRICAL CHARACHTERISTICS (TA = 25°C)
PARAMETER
DC Characteristics
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
ICBO
IEBO
hFE Note 1
VCB = 5 V, IE = 0 mA
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 6 mA
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept Point
|S21e|2
NF
NF
Ga
Ga
Cre Note 2
MSGNote 3
PO (1 dB)
OIP3
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
MIN. TYP. MAX. UNIT
− − 100
− − 100
220 300 380
nA
nA
6.0 8.5
0.95
dB
dB
1.1 1.5 dB
10.0
dB
7.5 9.5 dB
0.15 0.25
pF
11.0 14.0
dB
13.0 dBm
18.0 dBm
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
T1K
220 to 380









No Preview Available !

NESG3031M05 Даташит, Описание, Даташиты
PACKAGE DIMENSIONS (Units in mm)
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD (M05, 2012 PACKAGE
2.05±0.1
1.25±0.1
NESG3031M05
PIN CONNECTIONS
1. Base
2. Emitter
3. Collector
4. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/05/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.










Скачать PDF:

[ NESG3031M05.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NESG3031M05NECs NPN SiGe HIGH FREQUENCY TRAN SIS TORNEC
NEC
NESG3031M05-T1NECs NPN SiGe HIGH FREQUENCY TRAN SIS TORNEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск