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NEZ1011-8E PDF даташит

Спецификация NEZ1011-8E изготовлена ​​​​«NEC» и имеет функцию, называемую «8W X / Ku-BAND POWER GaAs MESFET».

Детали детали

Номер произв NEZ1011-8E
Описание 8W X / Ku-BAND POWER GaAs MESFET
Производители NEC
логотип NEC логотип 

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NEZ1011-8E Даташит, Описание, Даташиты
DATA SHEET
N-CHANNEL GaAs MESFET
NEZ1011-8E, NEZ1414-8E
8W X, Ku-BAND POWER GaAs MESFET
DESCRIPTION
The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high
output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
only a 50 external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The
device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
• High Output Power : Po (1 dB) = +39.5 dBm typ.
• High Linear Gain : 6.5 dB typ.
• High Efficiency : 25 % typ.
• Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number
NEZ1011-8E
NEZ1414-8E
T-61
Package
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NEZ1011-8E, NEZ1414-8E)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
IDS
IGF
IGR
PT
Tch
Tstg
Ratings
15
–7
10
+80
–80
60
175
–65 to +175
Unit
V
V
A
mA
mA
W
°C
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13730EJ1V0DS00 (1st edition)
Date Published September 1998 N CP(K)
Printed in Japan
© 1998









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NEZ1011-8E Даташит, Описание, Даташиты
NEZ1011-8E, NEZ1414-8E
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Gate ResistanceNote
Symbol
VDS
Gcomp
Tch
Rg
Test Condition
MIN.
9.0
25
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-8E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp VDS = 2.5 V, IDS = 40 mA
Gate to Drain Breakdown Voltage BVGD IGD = 40 mA
Thermal Resistance
Rth Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
GL
Po (1 dB)
IDS (1 dB)
η add (1 dB)
f = 10.7, 11.2, 11.7 GHz
VDS = 9.0 V
IDS = 2.0 A (RF OFF)
Rg = 100
3rd Order Intermodulation
Distortion
IM3 Pout = +35 dBm (2 tone)
MIN.
2.8
–3.0
15
6.0
38.5
[NEZ1414-8E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp VDS = 2.5 V, IDS = 40 mA
Gate to Drain Breakdown Voltage BVGD IGD = 40 mA
Thermal Resistance
Rth Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
GL
Po (1 dB)
IDS (1 dB)
η add (1 dB)
f = 14.0 to 14.5 GHz
VDS = 9.0 V
IDS = 2.8 A (RF OFF)
Rg = 50
MIN.
2.8
–3.0
15
6.0
38.5
TYP.
9.0
50
TYP.
6.0
–1.3
18
2.0
6.5
39.5
3.0
25
–40
TYP.
6.0
–1.3
18
2.0
6.5
39.5
3.0
25
MAX.
9.0
3
+130
50
Unit
V
dB
°C
MAX.
10.0
–0.5
2.5
4.0
Unit
A
V
V
°C/W
dB
dBm
A
%
dBc
MAX.
10.0
–0.5
2.5
4.0
Unit
A
V
V
°C/W
dB
dBm
A
%
2









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NEZ1011-8E Даташит, Описание, Даташиты
NEZ1011-8E, NEZ1414-8E
[NEZ1011-8E] TYPICAL CHARACTERISTICS (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
+40
Pout
+35
+30
+25
+20
+25 +30
Pin - Input Power - dBm
100
80
60
40
ηadd
20
0
+35
TEST CONDITIONS
Vds : 9.0 (V)
Ids : 2.0 (A)
3










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Номер в каталогеОписаниеПроизводители
NEZ1011-8E8W X / Ku-BAND POWER GaAs MESFETNEC
NEC

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