NEZ4450-4D PDF даташит
Спецификация NEZ4450-4D изготовлена «NEC» и имеет функцию, называемую «4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET». |
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Детали детали
Номер произв | NEZ4450-4D |
Описание | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
Производители | NEC |
логотип |
18 Pages
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PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
C1.5 4PLACES
SOURCE
R1.6 2PLACES
0.5±0.1
GATE
2.4
DRAIN
17.0±0.2
21.0±0.3
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
10.7
12.0
FEATURES
• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
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4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*TC = 25 ˚C
SYMBOL
VDS
VGS
VGD
ID
IG
PT*
Tch
Tstg
RATINGS
NEZ-4D, 4DD
NEZ-8D, 8DD
15 15
– 12
–12
– 18
– 18
4.5 9.0
25 50
25 50
175 175
– 65 to + 175
– 65 to + 175
UNIT
V
V
V
A
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Trans-Conductance
Gate to Drain Voltage
Thermal Resistance
SYMBOL
IDSS
VP
gm
BVGD0
Rth
Part No.
NEZ-4D
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
MIN.
1.0
2.0
– 3.5
– 3.5
—
—
20
20
—
—
TYP.
2.3
4.5
– 2.0
– 2.0
1300
2600
22
22
5.0
2.5
MAX.
3.5
7.0
– 0.5
– 0.5
—
—
—
—
6.0
3.0
UNIT
A
V
mS
V
˚C/W
TEST CONDITIONS
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, IDS = 15 mA
VDS = 2.5 V, IDS = 30 mA
VDS = 2.5 V, IDS = 1 A
VDS = 2.5 V, IDS = 2 A
IGD = 15 mA
IGD = 30 mA
Channel to Case
2
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4W/8W C-BAND Power-GaAs FET NEZ Series
4W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 Ω)
P1dB
GL
IDS GL IM3 ηadd
TEST CONDITIONS
PART NUMBER
(dBm)
*1
(dB)
(A)
(dB)
(dBc)
(%) VDS IDS FREQUENCY IM3 TEST
*2 *3, 4 *4
(RF OFF) BAND
FREQ.
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V) (A)
(GHz)
(GHz) *5
NEZ3642-4D
35.5 36.5 10.0 11.0 1.2 1.5 1.0 – 45 – 42 43 10 0.8 3.6 to 4.2
4.2
NEZ4450-4D, 4DD 35.5 36.5 9.5 10.5 1.2 1.5 1.0 – 45 – 42 40 10 0.8 4.4 to 5.0
5.0
NEZ5964-4D, 4DD 35.5 36.5 9.0 10.0 1.2 1.5 1.0 – 45 – 42 37 10 0.8 5.9 to 6.45 6.45
NEZ6472-4D, 4DD 35.5 36.5 8.0 9.0 1.2 1.5 1.0 – 45 – 42 35 10 0.8 6.4 to 7.2
7.2
NEZ7177-4D, 4DD 35.5 36.5 7.5 8.5 1.2 1.5 1.0 – 45 – 42 33 10 0.8 7.1 to 7.7
7.7
NEZ7785-4D, 4DD 35.5 36.5 7.0 8.0 1.2 1.5 1.0 – 45 – 42 33 10 0.8 7.7 to 8.5
8.5
Notes *1 Output power at 1dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to – 4DD option only
*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 26dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
(Ω)
200
VDS max.
(V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3
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Номер в каталоге | Описание | Производители |
NEZ4450-4D | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | NEC |
NEZ4450-4DD | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | NEC |
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