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NEZ6472-15DD PDF даташит

Спецификация NEZ6472-15DD изготовлена ​​​​«NEC» и имеет функцию, называемую «15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET».

Детали детали

Номер произв NEZ6472-15DD
Описание 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Производители NEC
логотип NEC логотип 

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NEZ6472-15DD Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
GaAs MES FET
15 W C-BAND POWER GaAs FET NEZ SERIES
15 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 are
designed to provide good flatness of gain and output
power in allocated band.
To reduce the thermal resistance, the device has a
PHS (Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
PACKAGE DIMENSIONS (unit: mm)
SOURCE
C1.0 4PLACES
GATE
0.5 ±0.1
R1.2 4PLACES
DRAIN
20.4 ±0.2
20.4 ±0.3
NEZ PART NUMBER
NEZ3642-15D, 15DD
NEZ4450-15D, 15DD
NEZ5964-15D, 15DD
NEZ6472-15D, 15DD
NEZ7785-15D
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.7 to 8.5
16.0
16.0
FEATURES
• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10982EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996









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NEZ6472-15DD Даташит, Описание, Даташиты
15 W C-BAND Po GaAs FET NEZ SERIES
NEZ-15D/15DD
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
VGD
ID
IG
PT*
Tch
Tstg
RATINGS
15
–12
–18
18
100
100
175
–65 to +175
UNIT
V
V
V
A
mA
W
˚C
˚C
* TC = 25 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Trans-Conductance
Gate to Drain Voltage
Thermal Resistance
SYMBOL
IDSS
VP
gm
BVGDO
Rth
Part No.
NEZ-15D
NEZ-15DD
NEZ-15D
NEZ-15DD
NEZ-15D
NEZ-15DD
NEZ-15D
NEZ-15DD
NEZ-15D
NEZ15DD
MIN.
4.0
TYP.
9.2
MAX.
14.0
UNIT
A
TEST CONDITIONS
VDS = 2.5 V, VGS = 0 V
–3.5 –2.2 –0.5
V VDS = 2.5 V, IDS = 60 mA
– 5200 –
mS VDS = 2.5 V, IDS = 4 A
20 22
V IGD = 60 mA
– 1.3 1.5 ˚C/W Channel to Case
2









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NEZ6472-15DD Даташит, Описание, Даташиты
15 W C-BAND Po GaAs FET NEZ SERIES
15W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Zs = ZL = 50 )
PART NUMBER
p1dB
(dBm)
*1
GL
(dB)
IDS GL IM3 ηadd
(A)
(dB) (dBc)
(%)
*2 *3,4 *4
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP.
VDS
(V)
NEZ3642-15D 41.5 42.5 9.0 10.0 4.8 6.0 – – – 35 10
NEZ3642-15DD 41.5 42.5 9.0 10.0 4.8 6.0 1.0 – –42 35 10
NEZ4450-15D 41.5 42.5 9.0 10.0 4.8 6.0 – – – 35 10
NEZ4450-15DD 41.5 42.5 9.0 10.0 4.8 6.0 1.0 – –42 35 10
NEZ5964-15D 41.5 42.5 8.0 9.0 4.8 6.0 – – – 33 10
NEZ5964-15DD 41.5 42.5 8.0 9.0 4.8 6.0 1.0 – –42 33 10
NEZ6472-15D 41.5 42.5 6.5 7.5 4.8 6.0 – – – 31 10
NEZ6472-15DD 41.5 42.5 6.5 7.5 4.8 6.0 1.0 – –42 31 10
NEZ7785-15D 41.5 42.5 6.0 7.0 4.8 6.0 – – – 27 10
TEST CONDITIONS
IDS FREQUENCY IM3 TEST
*5 BAND
FREQ.
(A) (GHz)
(GHz)*6
4.0 3.6 to 4.2
4.0 3.6 to 4.2
4.0 4.4 to 5.0
4.0 4.4 to 5.0
4.0 5.9 to 6.45
4.0 5.9 to 6.45
4.0 6.4 to 7.2
4.0 6.4 to 7.2
4.0 7.7 to 8.5
4.2
5.0
6.45
7.2
Notes *1 Output power at 1 dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to –15DD option only
*5 RF OFF
*6 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 31.5 dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max. ()
50
VDS max. (V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3










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Номер в каталогеОписаниеПроизводители
NEZ6472-15D15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FETNEC
NEC
NEZ6472-15DD15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FETNEC
NEC

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