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NEZ7177-4D PDF даташит

Спецификация NEZ7177-4D изготовлена ​​​​«NEC» и имеет функцию, называемую «4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET».

Детали детали

Номер произв NEZ7177-4D
Описание 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Производители NEC
логотип NEC логотип 

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NEZ7177-4D Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
C1.5 4PLACES
SOURCE
R1.6 2PLACES
0.5±0.1
GATE
2.4
DRAIN
17.0±0.2
21.0±0.3
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
10.7
12.0
FEATURES
• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996









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NEZ7177-4D Даташит, Описание, Даташиты
4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*TC = 25 ˚C
SYMBOL
VDS
VGS
VGD
ID
IG
PT*
Tch
Tstg
RATINGS
NEZ-4D, 4DD
NEZ-8D, 8DD
15 15
– 12
–12
– 18
– 18
4.5 9.0
25 50
25 50
175 175
– 65 to + 175
– 65 to + 175
UNIT
V
V
V
A
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Trans-Conductance
Gate to Drain Voltage
Thermal Resistance
SYMBOL
IDSS
VP
gm
BVGD0
Rth
Part No.
NEZ-4D
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
MIN.
1.0
2.0
– 3.5
– 3.5
20
20
TYP.
2.3
4.5
– 2.0
– 2.0
1300
2600
22
22
5.0
2.5
MAX.
3.5
7.0
– 0.5
– 0.5
6.0
3.0
UNIT
A
V
mS
V
˚C/W
TEST CONDITIONS
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, IDS = 15 mA
VDS = 2.5 V, IDS = 30 mA
VDS = 2.5 V, IDS = 1 A
VDS = 2.5 V, IDS = 2 A
IGD = 15 mA
IGD = 30 mA
Channel to Case
2









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NEZ7177-4D Даташит, Описание, Даташиты
4W/8W C-BAND Power-GaAs FET NEZ Series
4W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 )
P1dB
GL
IDS GL IM3 ηadd
TEST CONDITIONS
PART NUMBER
(dBm)
*1
(dB)
(A)
(dB)
(dBc)
(%) VDS IDS FREQUENCY IM3 TEST
*2 *3, 4 *4
(RF OFF) BAND
FREQ.
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V) (A)
(GHz)
(GHz) *5
NEZ3642-4D
35.5 36.5 10.0 11.0 1.2 1.5 1.0 – 45 – 42 43 10 0.8 3.6 to 4.2
4.2
NEZ4450-4D, 4DD 35.5 36.5 9.5 10.5 1.2 1.5 1.0 – 45 – 42 40 10 0.8 4.4 to 5.0
5.0
NEZ5964-4D, 4DD 35.5 36.5 9.0 10.0 1.2 1.5 1.0 – 45 – 42 37 10 0.8 5.9 to 6.45 6.45
NEZ6472-4D, 4DD 35.5 36.5 8.0 9.0 1.2 1.5 1.0 – 45 – 42 35 10 0.8 6.4 to 7.2
7.2
NEZ7177-4D, 4DD 35.5 36.5 7.5 8.5 1.2 1.5 1.0 – 45 – 42 33 10 0.8 7.1 to 7.7
7.7
NEZ7785-4D, 4DD 35.5 36.5 7.0 8.0 1.2 1.5 1.0 – 45 – 42 33 10 0.8 7.7 to 8.5
8.5
Notes *1 Output power at 1dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to – 4DD option only
*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 26dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
()
200
VDS max.
(V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3










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Номер в каталогеОписаниеПроизводители
NEZ7177-4D4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FETNEC
NEC
NEZ7177-4DD4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FETNEC
NEC

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