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NGA-686 PDF даташит

Спецификация NGA-686 изготовлена ​​​​«ETC» и имеет функцию, называемую «DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER».

Детали детали

Номер произв NGA-686
Описание DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER
Производители ETC
логотип ETC логотип 

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NGA-686 Даташит, Описание, Даташиты
Preliminary
Product Description
Sirenza Microdevices’ NGA-686 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.
Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 6 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products.
Small Signal Gain vs. Frequency
25
20
15
dB
10
5
0
01234567
Frequency GHz
8
NGA-686
DC-6000 MHz, Cascadable GaAs
HBT MMIC Amplifier
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
• 11.4dB Gain, 19.2 dBm P1dB at 1950Mhz
• Cascadable 50 ohm: 1.2:1 VSWR
• Operates from Single Supply
• Low Thermal Resistance Package
• Unconditionally Stable
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units
Frequency
Min. Typ. Max.
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
2400 MHz
19.8
19.2
17.9
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
2400 MHz
38.4
34.9
32.7
G Small Signal Gain
850 MHz
10.7 11.9 13.1
dB 1950 MHz
11.4
2400 MHz
11.2
Bandwidth Determined by Return Loss (>10dB)
MHz
5800
Input VSWR
- DC - 6000 MHz
1.2:1
Output VSWR
- DC - 6000 MHz
1.3:1
NF Noise Figure
dB 2000 MHz
6.1
VD Device Operating Voltage
V
5.3 5.8 6.3
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
°C/W
121
Test Conditions:
VS = 8 V
RBIAS = 27 Ohms
ID = 80 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101106 Rev OBS









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NGA-686 Даташит, Описание, Даташиты
OBSOLETPEreliminary
NGA-686 DC-6.0 GHz 5.9V GaAs HBT
Key parameters, at typical operating frequencies:
Parameter
Typical
25ºC
Unit
Test Condition
(ID = 80mA, unless otherwise noted)
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
11.9 dB
38.5 dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
19.9 dBm
21.4 dB
19.7 dB
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
11.9 dB
38.4 dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
19.8 dBm
20.7 dB
19.8 dB
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
11.4 dB
34.9 dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
19.2 dBm
18.4 dB
19.7 dB
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
11.2 dB
32.7 dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
17.9 dBm
17.6 dB
19.7 dB
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
120 mA
7V
+13 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101106 Rev OBS









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NGA-686 Даташит, Описание, Даташиты
OBSOLETPEreliminary
NGA-686 DC-6.0 GHz 5.9V GaAs HBT
S-parameters over frequency, at 25ºC
S21, ID =80mA, T=25ºC
25
20
15
dB
10
5
0
012345678
Frequency GHz
S11, ID =80mA, T=25ºC
0
-5
-10
dB
-15
-20
-25
012345678
Frequency GHz
S12, ID =80mA, T=25ºC
0
-5
-10
dB
-15
-20
-25
012345678
Frequency GHz
S22, ID =80mA, T=25ºC
0
-5
-10
dB
-15
-20
-25
012345678
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101106 Rev OBS










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Номер в каталогеОписаниеПроизводители
NGA-686DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIERETC
ETC
NGA-689DC-5000 MHz / Cascadable GaAs HBT MMIC AmplifierETC
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