NGA-689 PDF даташит
Спецификация NGA-689 изготовлена «ETC» и имеет функцию, называемую «DC-5000 MHz / Cascadable GaAs HBT MMIC Amplifier». |
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Детали детали
Номер произв | NGA-689 |
Описание | DC-5000 MHz / Cascadable GaAs HBT MMIC Amplifier |
Производители | ETC |
логотип |
8 Pages
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Product Description
Stanford Microdevices NGA-689 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.
Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products.
PPrerelilmimininaaryry
NGA-689
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
16
14
12
10
8
6
0
Small Signal Gain vs. Frequency
246
Frequency GHz
8
Product Features
11.7dB Gain, 18.9 dBm P1dB at 1950Mhz
Cascadable 50 ohm: 1.4:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, ID = 80 mA, T = 25ºC
P1dB
Output Power at 1dB Compression
IP3
Third Order Intercept Point
Power out per tone = 0 dBm
S21 Small Signal Gain
Bandwidth
S11
S22
Determined by S11 and S22 values
Input VSWR
Output VSWR
S12 Reverse Isolation
NF
VD
Rth, j-l
Noise Figure
Device Voltage
Thermal Resistance (junction - lead)
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = DC - 5000 MHz
f = DC - 5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 2000 MHz
Units
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
-
-
dB
dB
dB
dB
V
ºC/W
Min.
Typ.
19.9
18.9
17.9
36.9
33.6
32.1
11.9
11.7
11.6
5000
1.4:1
1.4:1
19.7
19.5
19.4
6.0
5.8
91
Max.
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1 EDS-101442 Rev A
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PPrerelilmimininaaryry
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Parameter
Supply Current
Device Voltage
Operating Temperature
Maximum Input Power
Storage Temperature Range
Operating Junction Temperature
Value
120
6.7
-40 to +85
+13
-40 to +150
+150
Unit
mA
V
ºC
dBm
ºC
ºC
Parameter
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
Key parameters, at typical operating frequencies:
Typical
25ºC
Unit
Test Condition
(ID = 80mA, unless otherwise noted)
12.0
37.2
19.9
19.6
19.7
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
11.9
36.9
19.9
18.5
19.7
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
11.7
33.6
18.9
16.0
19.5
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
11.6
32.1
17.9
15.9
19.4
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101442 Rev A
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Pin #
1
2
3
4
PPrerelilmimininaaryry
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Function
RF IN
GND
RF OUT/
BIAS
GND
Description
RF input pin. This pin requires the use of
an external DC blocking capacitor chosen
for the frequency of operation.
Connection to ground. For best
performance use via holes (as close to
ground leads as possible) to reduce lead
inductance.
RF output and bias pin. Bias should be
supplied to this pin through an external
series resistor and RF choke inductor.
Because DC biasing is present on this
pin, a DC blocking capacitor should be
used in most applications (see application
schematic). The supply side of the bias
network should be well bypassed.
Same as Pin 2.
Device Schematic
Application Schematic
Recommended Bias Resistor Values
Supply
Voltage(Vs)
8V
9V 12V
Rbias (Ohms) 27 39 75
For 8V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
Cd1 Cd2
50 ohm
microstrip
2
1
3
Cb1 4
R bias
Lchoke
50 ohm
microstrip
Cb2
Vs
Reference
Designator
Cb1
Cb2
Cd1
Cd2
Lchoke
Function
DC Blocking
DC Blocking
Decoupling
Decoupling
AC Blocking
500 MHz
220 pF
220 pF
1 uF
100 pF
68 nH
850 MHz
100 pF
100 pF
1 uF
68 pF
33 nH
1950 MHz
68 pF
68 pF
1 uF
22 pF
22 nH
2400 MHz
56 pF
56 pF
1 uF
22 pF
18 nH
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101442 Rev A
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