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NIF5002ND PDF даташит

Спецификация NIF5002ND изготовлена ​​​​«ON» и имеет функцию, называемую «Self-Protected FET with Temperature and Current Limit».

Детали детали

Номер произв NIF5002ND
Описание Self-Protected FET with Temperature and Current Limit
Производители ON
логотип ON логотип 

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NIF5002ND Даташит, Описание, Даташиты
NIF5002N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlusdevices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Applications
Lighting
Solenoids
Small Motors
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
VDSS
VDGR
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TT = 25°C (Note 3)
VGS
ID
PD
Operating Junction and Storage Temperature TJ, Tstg
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A,
L = 300 mH, RG(ext) = 25 W)
THERMAL RESISTANCE RATINGS
EAS
Value
42
42
Unit
V
V
"14
V
Internally Limited
1.1 W
1.7
8.9
−55 to
150
°C
150 mJ
Rating
Symbol Value Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Tab − Steady State (Note 3)
RqJA
RqJA
RqJT
114 °C/W
72
14
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06thick).
2. Surface−mounted onto 2sq. FR4 board (1sq., 1 oz. Cu, 0.06thick).
3. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06thick).
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 5
1
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V(BR)DSS
(Clamped)
42 V
RDS(ON) TYP
165 mW @ 10 V
ID MAX
2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Gate
Input
Overvoltage
Protection
RG
ESD Protection
MPWR
Temperature Current Current
Limit
Limit Sense
Source
SOT−223
CASE 318E
Style 3
GATE
DRAIN
SOURCE
MARKING
DIAGRAM
1
4
2
3
DRAIN
(Top View)
5002N
L
YM
= Specific Device Code
= Location Code
= Year, Month
ORDERING INFORMATION
Device
Package
Shipping
NIF5002NT1
SOT−223 1000/Tape & Reel
NIF5002NT3
SOT−223 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NIF5002N/D









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NIF5002ND Даташит, Описание, Даташиты
NIF5002N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 4)
Zero Gate Voltage Drain Current
Gate Input Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance
Source−Drain Forward On Voltage
SWITCHING CHARACTERISTICS
Turn−on Time
Turn−off Time
Slew Rate On
Slew−Rate Off
V(BR)DSS
IDSS
IGSSF
VGS = 0 V, ID = 10 mA
TJ = 25°C
TJ = 150°C
VGS = 0 V, VDS = 32 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = 5.0 V
VGS(th)
VGS(th)/TJ
RDS(on)
VSD
VGS = VDS, ID = 150 mA
VGS = 10 V, ID = 1.7 A
TJ = 25°C
TJ = 150°C
VGS = 5.0 V, ID = 1.7 A
TJ = 25°C
TJ = 150°C
VGS = 5.0 V, ID = 0.5 A
TJ = 25°C
TJ = 150°C
VGS = 0 V, IS = 7.0 A
td(on)
td(off)
dVDS/dton
dVDS/dtoff
VGS = 10 V, VDD = 12 V,
ID = 2.5 A, RL = 4.7 W,
(10% Vin to 90% ID)
RL = 4.7 W, Vin = 0 to 10 V,
VDD = 12 V, 70% to 50%
RL = 4.7 W, Vin = 0 to 10 V,
VDD = 12 V, 50% to 70%
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
ILIM TJ = 25°C
VDS = 10 V, VGS = 5.0 V TJ = 150°C
TJ = 25°C
VDS = 10 V, VGS = 10 V TJ = 150°C
Temperature Limit (Turn−off)
TLIM(off)
VGS = 5.0 V
Temperature Limit (Circuit Reset)
TLIM(on)
VGS = 5.0 V
Temperature Limit (Turn−off)
TLIM(off)
VGS = 10 V
Temperature Limit (Circuit Reset)
TLIM(on)
VGS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
ESD
Human Body Model (HBM)
Machine Model (MM)
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
Min
42
40
1.3
3.1
2.0
3.8
2.8
150
135
150
135
4000
400
Typ
46
45
0.25
1.1
50
1.8
4.0
165
305
195
360
190
350
1.0
20
65
1.2
0.5
4.7
3.2
5.7
4.3
175
160
165
150
Max Unit
55 V
55
4.0 mA
20
100 mA
2.2 V
6.0 −mV/°C
200 mW
400
230
460
230
460
V
30 ms
100
V/ms
6.3 A
4.3
7.6
5.7
200 °C
185
185
170
V
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NIF5002ND Даташит, Описание, Даташиты
NIF5002N
TYPICAL PERFORMANCE CURVES
7 10 V
TJ = 25°C
9V
6
8V
5 7V
4
6V
5V
4V
3.8 V
3 3.6 V
3.4 V
2 3.2 V
3.0 V
1 2.8 V
0 2.6 V
0 12 34
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
VDS 10 V
3
2
100°C
1
25°C
0 TJ = −55°C
1 1.5 2 2.5 3 3.5 4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
ID = 1.7 A
TJ = 25°C
3 45 6 78 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.3
0.25
TJ = 25°C
0.2
VGS = 5 V
0.15
0.1
VGS = 10 V
0.05
0
2345
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
ID = 1.7 A
VGS = 5 V
2
1.5
1
0.5
10000
VGS = 0 V
1000
100
10
TJ = 150°C
TJ = 100°C
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
10 20 30 40
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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Номер в каталогеОписаниеПроизводители
NIF5002NSelf-Protected FET with Temperature and Current LimitON
ON
NIF5002NDSelf-Protected FET with Temperature and Current LimitON
ON
NIF5002NT1Self-Protected FET with Temperature and Current LimitON
ON
NIF5002NT3Self-Protected FET with Temperature and Current LimitON
ON

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