DataSheet26.com

836A PDF даташит

Спецификация 836A изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «SILICON 28V HYPERABRUPT VARACTOR DIODES».

Детали детали

Номер произв 836A
Описание SILICON 28V HYPERABRUPT VARACTOR DIODES
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

6 Pages
scroll

No Preview Available !

836A Даташит, Описание, Даташиты
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase noise
performance. Available in single or dual common cathode format
in a wide rage of miniature surface mount packages.
Features
· Close tolerance C-V characteristics
· High tuning ratio
· Low IR (typically 200pA)
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
Applications
· VCXO and TCXO
· Wireless communications
· Pagers
· Mobile radio
830 series
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1









No Preview Available !

836A Даташит, Описание, Даташиты
830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
VR=2V, f=1MHz
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
MIN.
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
Min Q
VR=3V
f=50MHz
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
Capacitance Ratio
C2 / C20
at f=1MHz
MIN.
MAX.
4.3 5.8
4.3 5.8
4.5 6.0
4.5 6.0
4.5 6.0
4.5 6.0
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forward current
Power dissipation at Tamb = 25ЊC SOT23
Power dissipation at Tamb = 25ЊC SOD323
Power dissipation at Tamb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
IF
Ptot
Ptot
Ptot
MAX
200
330
330
250
-55 to +150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
IR = 10uA
VR = 20V
VR = 3V, f = 1MHz
MIN.
25
TYP.
0.2
300
MAX.
20
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2









No Preview Available !

836A Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS
830 series
ISSUE 6 - JANUARY 2002
3










Скачать PDF:

[ 836A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
8361T-1 Subminiature LampsGilway Technical Lamp
Gilway Technical Lamp
83627HG-AW W83627HG-AWWinbond
Winbond
836ASILICON 28V HYPERABRUPT VARACTOR DIODESZetex Semiconductors
Zetex Semiconductors
836AN-0131ZVariable CoilsTOKO
TOKO

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск