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8ETH03 PDF даташит

Спецификация 8ETH03 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Ultrafast Rectifier ( Diode )».

Детали детали

Номер произв 8ETH03
Описание Ultrafast Rectifier ( Diode )
Производители International Rectifier
логотип International Rectifier логотип 

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8ETH03 Даташит, Описание, Даташиты
Bulletin PD-20023 rev. C 09/01
Ultrafast Rectifier
8ETH03
8ETH03S
8ETH03-1
Features
• Ultrafast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
trr = 35ns
IF(AV) = 8Amp
VR = 300V
Description/ Applications
International Rectifier's 300V series are the state of the art Ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop and Ultrafast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
VRRM
IF(AV)
IFSM
TJ, TSTG
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
@ T C = 155°C
Non Repetitive Peak Surge Current
@ T J = 25°C
Operating Junction and Storage Temperatures
Max
300
8
100
- 65 to 175
Units
V
A
°C
8ETH03
Case Styles
8ETH03S
8ETH03-1
Base
Cathode
1
Cathode
3
Anode
TO-220AC
www.irf.com
Base
Cathode
2
1
N/C
3
Anode
D2PAK
2
1
N/C
3
Anode
TO-262
1









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8ETH03 Даташит, Описание, Даташиты
8ETH03, 8ETH03S, 8ETH03-1
Bulletin PD-20023 rev. C 09/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
VF
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
300 - -
V I R = 100µA
- 1.0 1.25 V
- 0.83 1.00 V
- 0.02 20 µA
- 6.0 200 µA
- 31 - pF
- 8 - nH
I F = 8A
I F = 8A, TJ = 125°C
V R = VR Rated
T J = 125°C, VR = VR Rated
V R = 300V
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- - 35 ns I F = 1A, diF/dt = -50A/µs, VR = 30V
- 27 -
TJ = 25°C
- 40 -
- 2.2 -
- 5.3 -
TJ = 125°C
A T J = 25°C
TJ = 125°C
IF = 8A
diF /dt = - 200A/µs
VR = 200V
- 30 - nC T J = 25°C
- 106 -
TJ = 125°C
Thermal - Mechanical Characteristics
TJ
TStg
RthJC
RthJA !
RthCS"
Parameters
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case Per Leg
Thermal Resistance, Junction to Ambient Per Leg
Thermal Resistance, Case to Heatsink
Weight
Mounting Torque
! Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased
Min
- 65
- 65
-
-
-
-
-
6.0
5.0
Typ
-
-
1.45
-
0.2
2.0
0.07
-
-
Max
175
175
2.5
70
-
-
-
12
10
Units
°C
°C/W
g
(oz)
Kg-cm
lbf.in
2 www.irf.com









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8ETH03 Даташит, Описание, Даташиты
8ETH03, 8ETH03S, 8ETH03-1
Bulletin PD-20023 rev. C 09/01
100 1000
Tj = 175˚C
100
150˚C
10 125˚C
100˚C
1
0.1
0.01
25˚C
0.001
0 50 100 150 200 250 300
10
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
T J = 25˚C
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
100
1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
10
0 50 100 150 200 250 300
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.50
1
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
PDM
Notes:
1. Duty factor D = t1/ t2
t1
t2
.
0.01
0.00001
0.0001
0.001
2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
www.irf.com
.
10
3










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