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NNCD3.3B PDF даташит

Спецификация NNCD3.3B изготовлена ​​​​«NEC» и имеет функцию, называемую «ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE».

Детали детали

Номер произв NNCD3.3B
Описание ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE
Производители NEC
логотип NEC логотип 

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NNCD3.3B Даташит, Описание, Даташиты
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV.
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with
DHD (Double Heatsink Diode) construction having allowable
power dissipation of 500 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
PACKAGE DIMENSIONS
(in millimeters)
φ 0.5
Cathode
indication
φ 2.0 MAX.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Tj
Storage Temperature
Tstg
500 mW
100 W (tT = 10 µs 1 pulse)
175 °C
–65 °C to +175 °C
Fig. 7
Document No. D11770EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
© 1996









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NNCD3.3B Даташит, Описание, Даташиты
NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz ()
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3B
3.16 3.53
20
70
20
20
1.0
NNCD3.6B
3.47 3.83
20
60
20
10
1.0
NNCD3.9B
3.77 4.14
20
50
20
5
1.0
NNCD4.3B
4.05 4.53
20
40
20
5
1.0
NNCD4.7B
4.47 4.91
20
25
20
5
1.0
NNCD5.1B
4.85 5.35
20
20
20
5
1.5
NNCD5.6B
5.29 5.88
20
13
20
5
2.5
NNCD6.2B
5.81 6.40
20
10
20
5
3.0
NNCD6.8B
6.32 6.97
20
8
20
2
3.5
NNCD7.5B
6.88 7.64
20
8
20 0.5 4.0
NNCD8.2B
7.56 8.41
20
8
20 0.5 5.0
NNCD9.1B
8.33 9.29
20
8
20 0.5 6.0
NNCD10B
9.19 10.3
20
8
20 0.2 7.0
NNCD11B
10.18 11.26
10
10
10 0.2 8.0
NNCD12B
11.13 12.30
10
10
10 0.2 9.0
Capacitance
Ct (pF)
TYP.
240
230
220
210
190
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2









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NNCD3.3B Даташит, Описание, Даташиты
NNCD3.3B to NNCD12B
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
500
= 5 mm
400 = 10 mm
300 10 mm
200 P.C Board φ 3 mm
t = 0.035 mm
100
P.C Board
7 mm
t = 0.035 mm
0
0 20 40 60 80 100 120 140 160 180 200
TA - Ambient Temperature - °C
Fig. 3 IT - VBR CHARACTERISTICS
NNCD5.6B TA = 25 °C NNCD6.8B
NNCD5.1B
TYP.
NNCD6.2B
100 m
NNCD7.5B
NNCD8.2B
NNCD3.3B
NNCD3.6B
NNCD9.1B
10 m NNCD3.9B
NNCD4.3B
NNCD4.7B
1m
Fig. 2 THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
600
Junction to
anbient
500
400 S
300
= 10 mm
200
= 5 mm
100
0
0 20 40 60 80 100
S - Size of P.C Board - mm2
Fig. 4 IT - VBR CHARACTERISTICS
100 m
10 m
TA = 25 °C
TYP.
NNCD11B
NNCD10B NNCD12B
1m
100 µ
100 µ
10 µ
10 µ
1µ 1µ
100 n
100 n
10 n 10 n
1n
0
12345678
VBR - Breakdown Voltage - V
9
1n
0
7 8 9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
3










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Номер в каталогеОписаниеПроизводители
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NNCD3.3CELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPENEC
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