NNCD6.8C PDF даташит
Спецификация NNCD6.8C изготовлена «NEC» и имеет функцию, называемую «ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE». |
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Детали детали
Номер произв | NNCD6.8C |
Описание | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE |
Производители | NEC |
логотип |
8 Pages
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DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3C to NNCD12C
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(150 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3C to NNCD12C Series are into 2PIN Ultra Super
Mini Mold Package having allowable power dissipation of 150 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
PACKAGE DIMENSIONS
(in millimeters)
2.1 ± 0.1
1.3 ± 0.1
Cathode
Indication
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Tj
Storage Temperature
Tstg
150 mW
85 W (tT = 10 µs 1 pulse)
150 °C
–55 °C to +150 °C
Fig. 6
Document No. D11771EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
© 1996
No Preview Available ! |
NNCD3.3C to NNCD12C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz (Ω)
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3C
3.10 3.50
5
130
5
NNCD3.6C
3.40 3.80
5
130
5
NNCD3.9C
3.70 4.10
5
130
5
NNCD4.3C
4.00 4.49
5
130
5
NNCD4.7C
4.40 4.92
5
130
5
NNCD5.1C
4.82 5.39
5
130
5
NNCD5.6C
5.29 5.94
5
80
5
NNCD6.2C
5.84 6.55
5
50
5
NNCD6.8C
6.44 7.17
5
30
5
NNCD7.5C
7.03 7.87
5
30
5
NNCD8.2C
7.73 8.67
5
30
5
NNCD9.1C
8.53 9.58
5
30
5
NNCD10C
9.42 10.58
5
30
5
NNCD11C
10.40 11.60
5
30
5
NNCD12C
11.38 12.64
5
35
5
20 1.0
10 1.0
10 1.0
10 1.0
10 1.0
5 1.5
5 2.5
5 3.0
2 3.5
2 4.0
2 5.0
2 6.0
2 7.0
2 8.0
2 9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
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NNCD3.3C to NNCD12C
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
200
30 × 30 × 0.75
P.C.B. (Ceramic)
150
100 10 × 7.5 × 0.75
P.C.B. (Glass Epoxy)
20 × 15 × 0.75
P.C.B. (Ceramic)
10 × 7.5 × 0.75
P.C.B. (Ceramic)
50
0
0 50 100 150 200
TA - Ambient Temperature - °C
Fig. 2 IT - VBR CHARACTERISTICS
Fig. 3 IT - VBR CHARACTERISTICS
100 m
NNCD7.5C
NNCD6.8C
NNCD8.2C
NNCD9.1C
NNCD3.3C
NNCD3.6C
10 m NNCD3.9C
NNCD4.3C
1m
NNCD4.7C
100 µ
10 µ
1µ
100 n NNCD5.1C
NNCD5.6C
10 n NNCD6.2C
1n
0 1 2 3 4 5 6 7 8 9 10
VBR - Breakdown Voltage - V
100 m
10 m
NNCD11C
NNCD10C
NNCD12C
1m
100 µ
10 µ
1µ
100 n
10 n
1n
0 7 8 9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
3
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Номер в каталоге | Описание | Производители |
NNCD6.8A | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE | NEC |
NNCD6.8B | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE | NEC |
NNCD6.8C | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE | NEC |
NNCD6.8D | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE | NEC |
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