NTB125N02RT4 PDF даташит
Спецификация NTB125N02RT4 изготовлена «ON» и имеет функцию, называемую «Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK». |
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Детали детали
Номер произв | NTB125N02RT4 |
Описание | Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK |
Производители | ON |
логотип |
6 Pages
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NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous
Operation
• Low Ciss to Minimize Driver Loss
• Optimized Qgd and RDS(on) for Shoot−through Protection
• Low Gate Charge
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current −
Continuous @ TC = 25°C, Chip
Continuous @ TC = 25°C, Limited by Package
Continuous @ TA = 25°C, Limited by Wires
Single Pulse (tp = 10 ms)
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
ID
24
±20
1.1
113.6
Vdc
Vdc
°C/W
W
125
120.5
95
250
A
A
A
A
RqJA
PD
ID
46 °C/W
2.72 W
18.6 A
RqJA
PD
ID
TJ, Tstg
63 °C/W
1.98 W
15.9 A
−55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
EAS 120 mJ
TL 260 °C
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
PIN ASSIGNMENT
PIN FUNCTION
1 Gate
2 Drain
3 Source
4 Drain
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125 AMPERES, 24 VOLTS
RDS(on) = 3.7 mW (Typ)
D
G
S
MARKING
DIAGRAMS
4 TO−220AB
CASE 221A 125N2R
STYLE 5
YWW
123
4 D2PAK
125N2
CASE 418AA
YWW
2 STYLE 2
13
125N2 = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NTB125N02R
NTB125N02RT4
NTP125N02R
Package
D2PAK
D2PAK
TO−220AB
Shipping†
50 Units/Rail
800/Tape & Reel
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 4
1
Publication Order Number:
NTB125N02R/D
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NTB125N02R, NTP125N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
25
−
28
15
Vdc
−
− mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
mAdc
− − 1.5
− − 10
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
nAdc
− − ±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
1.0 1.5 2.0
− 5.0 − mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 110 Adc)
(VGS = 4.5 Vdc, ID = 55 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 15 Adc)
RDS(on)
mW
− 3.7 −
− 4.9 −
− 3.7 4.6
− 4.7 6.2
gFS Mhos
− 44 −
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
−
2710 3440
pF
− 1105 1670
− 227 640
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 40 Adc, RG = 3 W)
td(on)
tr
td(off)
tf
− 11 22 ns
− 39 80
− 27 40
− 21 40
Gate Charge
(VGS = 4.5 Vdc, ID = 40 Adc,
VDS = 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
QT − 23.6 28 nC
Q1 − 5.1 −
Q2 − 11 −
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
−
0.82 1.2
Vdc
− 0.99 −
− 0.65 −
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
trr
ta
tb
QRR
− 36.5 −
− 17.7 −
− 18.8 −
− 0.024 −
ns
mC
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NTB125N02R, NTP125N02R
200
4.0 V
4.5 V
160
5.0 V
6.0 V
120 8.0 V
10 V
80
40
3.5 V
3.0 V
VGS = 2.5 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
200
VDS ≥ 10 V
160
120
80
TJ = 125°C
40
TJ = 25°C
TJ = −55°C
0
0 0.8 1.6 2.4 3.2 4.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
VGS = 10 V
0.01
VGS = 4.5 V
0.008
0.008
TJ = 125°C
0.006
0.004
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.006
0.004
TJ = 25°C
TJ = −55°C
0.002
0 40 80 120 160 200
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.002
0 40 80 120 160 200
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.8
ID = 55 A
1.6 VGS = 4.5 V
1.4
1.2
100,000
VGS = 0 V
10,000
1000
TJ = 150°C
TJ = 125°C
1.0
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
TJ = 100°C
100
10
0 4.0 8.0 12 16 20 24
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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Номер в каталоге | Описание | Производители |
NTB125N02RT4 | Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK | ON Semiconductor |
NTB125N02RT4 | Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK | ON |
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