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NTB125N02RT4 PDF даташит

Спецификация NTB125N02RT4 изготовлена ​​​​«ON» и имеет функцию, называемую «Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK».

Детали детали

Номер произв NTB125N02RT4
Описание Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK
Производители ON
логотип ON логотип 

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NTB125N02RT4 Даташит, Описание, Даташиты
NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D2PAK
Features
Planar HD3e Process for Fast Switching Performance
Body Diode for Low trr and Qrr and Optimized for Synchronous
Operation
Low Ciss to Minimize Driver Loss
Optimized Qgd and RDS(on) for Shoot−through Protection
Low Gate Charge
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current −
Continuous @ TC = 25°C, Chip
Continuous @ TC = 25°C, Limited by Package
Continuous @ TA = 25°C, Limited by Wires
Single Pulse (tp = 10 ms)
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
ID
24
±20
1.1
113.6
Vdc
Vdc
°C/W
W
125
120.5
95
250
A
A
A
A
RqJA
PD
ID
46 °C/W
2.72 W
18.6 A
RqJA
PD
ID
TJ, Tstg
63 °C/W
1.98 W
15.9 A
−55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
EAS 120 mJ
TL 260 °C
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
PIN ASSIGNMENT
PIN FUNCTION
1 Gate
2 Drain
3 Source
4 Drain
http://onsemi.com
125 AMPERES, 24 VOLTS
RDS(on) = 3.7 mW (Typ)
D
G
S
MARKING
DIAGRAMS
4 TO−220AB
CASE 221A 125N2R
STYLE 5
YWW
123
4 D2PAK
125N2
CASE 418AA
YWW
2 STYLE 2
13
125N2 = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NTB125N02R
NTB125N02RT4
NTP125N02R
Package
D2PAK
D2PAK
TO−220AB
Shipping
50 Units/Rail
800/Tape & Reel
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 4
1
Publication Order Number:
NTB125N02R/D









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NTB125N02RT4 Даташит, Описание, Даташиты
NTB125N02R, NTP125N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
25
28
15
Vdc
− mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
mAdc
− − 1.5
− − 10
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
nAdc
− − ±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
1.0 1.5 2.0
− 5.0 − mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 110 Adc)
(VGS = 4.5 Vdc, ID = 55 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 15 Adc)
RDS(on)
mW
− 3.7 −
− 4.9 −
− 3.7 4.6
− 4.7 6.2
gFS Mhos
− 44 −
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
2710 3440
pF
− 1105 1670
− 227 640
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 40 Adc, RG = 3 W)
td(on)
tr
td(off)
tf
− 11 22 ns
− 39 80
− 27 40
− 21 40
Gate Charge
(VGS = 4.5 Vdc, ID = 40 Adc,
VDS = 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
QT − 23.6 28 nC
Q1 − 5.1 −
Q2 − 11 −
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.82 1.2
Vdc
− 0.99 −
− 0.65 −
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
trr
ta
tb
QRR
− 36.5 −
− 17.7 −
− 18.8 −
− 0.024 −
ns
mC
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NTB125N02RT4 Даташит, Описание, Даташиты
NTB125N02R, NTP125N02R
200
4.0 V
4.5 V
160
5.0 V
6.0 V
120 8.0 V
10 V
80
40
3.5 V
3.0 V
VGS = 2.5 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
200
VDS 10 V
160
120
80
TJ = 125°C
40
TJ = 25°C
TJ = −55°C
0
0 0.8 1.6 2.4 3.2 4.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
VGS = 10 V
0.01
VGS = 4.5 V
0.008
0.008
TJ = 125°C
0.006
0.004
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.006
0.004
TJ = 25°C
TJ = −55°C
0.002
0 40 80 120 160 200
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.002
0 40 80 120 160 200
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.8
ID = 55 A
1.6 VGS = 4.5 V
1.4
1.2
100,000
VGS = 0 V
10,000
1000
TJ = 150°C
TJ = 125°C
1.0
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
TJ = 100°C
100
10
0 4.0 8.0 12 16 20 24
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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Номер в каталогеОписаниеПроизводители
NTB125N02RT4Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAKON Semiconductor
ON Semiconductor
NTB125N02RT4Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAKON
ON

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