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NTB45N06T4 PDF даташит

Спецификация NTB45N06T4 изготовлена ​​​​«ON» и имеет функцию, называемую «Power MOSFET 45 Amps / 60 Volts».

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Номер произв NTB45N06T4
Описание Power MOSFET 45 Amps / 60 Volts
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NTB45N06T4 Даташит, Описание, Даташиты
NTP45N06, NTB45N06
Power MOSFET
45 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 M)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
45
30
150
125
0.83
3.2
2.4
–55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 ,
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
EAS 240 mJ
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
http://onsemi.com
45 AMPERES
60 VOLTS
RDS(on) = 26 m
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP45N06
LLYWW
1
Gate
3
Source
NTB45N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx45N06
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP45N06
NTB45N06
NTB45N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 0
1
Publication Order Number:
NTP45N06/D









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NTB45N06T4 Даташит, Описание, Даташиты
NTP45N06, NTB45N06
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Thermal Resistance – Junction–to–Case
– Junction–to–Ambient (Note 3.)
– Junction–to–Ambient (Note 4.)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
Symbol
RθJC
RθJA
RθJA
TL
Value
1.2
46.8
63.2
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 5.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
70
57
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 5.)
Gate Threshold Voltage (Note 5.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
––
––
IGSS – –
VGS(th)
2.0 2.8
– 7.2
Static Drain–to–Source On–Resistance (Note 5.)
(VGS = 10 Vdc, ID = 22.5 Adc)
RDS(on)
21
Static Drain–to–Source On–Voltage (Note 5.)
(VGS = 10 Vdc, ID = 45 Adc)
(VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C)
VDS(on)
– 0.93
– 0.93
Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc)
gFS – 16.6
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
– 1224
– 345
– 76
SWITCHING CHARACTERISTICS (Note 6.)
Turn–On Delay Time
td(on)
– 10
Rise Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 45 Adc,
VGS = 10 Vdc, RG = 9.1 ) (Note 5.)
tr
td(off)
– 101
– 33
Fall Time
tf – 106
Gate Charge
(VDS = 48 Vdc, ID = 45 Adc,
VGS = 10 Vdc) (Note 5.)
QT – 33
Q1 – 6.4
Q2 – 15
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
– 1.08
– 0.93
Reverse Recovery Time
(IS = 45 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 5.)
trr – 53.1
ta – 36
tb – 16.9
Reverse Recovery Stored Charge
QRR
– 0.087
3. When surface mounted to an FR4 board using 1pad size, (Cu Area 1.127 in2).
4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
5. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max Unit
1.0
10
±100
Vdc
mV/°C
µAdc
nAdc
Vdc
4.0 mV/°C
mOhm
26
Vdc
1.4
– mhos
1725
485
160
pF
25 ns
200
70
220
46 nC
1.2 Vdc
– ns
µC
http://onsemi.com
2









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NTB45N06T4 Даташит, Описание, Даташиты
NTP45N06, NTB45N06
90
VGS = 10 V
80
VGS = 9 V
70
VGS = 7 V
VGS = 6.5 V
60
VGS = 8 V
VGS = 6 V
50
40 VGS = 7.5 V VGS = 5.5 V
30
VGS = 5 V
20
VGS = 4.5 V
10
0
01 2345
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6
90
VDS > = 10 V
80
70
60
50
40
30
TJ = 25°C
20
TJ = 100°C
10
TJ = –55°C
0
3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.05
0.042
VGS = 10 V
0.034
TJ = 100°C
0.032
0.03
0.028
0.026
0.026
0.018
TJ = 25°C
TJ = –55°C
0.024
0.022
0.02
VGS = 10 V
VGS = 15 V
0.01
0 10 20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
0.018
0 10 20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
2.2
2
ID = 22.5 A
VGS = 10 V
1.8
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4 TJ = 125°C
1.2
100
1
0.8 TJ = 100°C
0.6
–50 –25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
0 10 20 30 40 50 60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
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NTB45N06T4Power MOSFET 45 Amps / 60 VoltsON
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