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NTD20P06LT4G PDF даташит

Спецификация NTD20P06LT4G изготовлена ​​​​«ON» и имеет функцию, называемую «Power MOSFET -60 V / -15.5 A / Single P-Channel / DPAK».

Детали детали

Номер произв NTD20P06LT4G
Описание Power MOSFET -60 V / -15.5 A / Single P-Channel / DPAK
Производители ON
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NTD20P06LT4G Даташит, Описание, Даташиты
NTD20P06L
Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
Pb−Free Packages are Available
Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source
Continuous
Voltage
Non−Repetitive tp v10 ms
Continuous
Drain Current
(Note 1)
Steady State TA = 25°C
VDSS
VGS
VGSM
ID
−60
$20
$30
−15.5
V
V
A
Power Dissipa-
tion (Note 1)
Steady State TA = 25°C
PD
65 W
Pulsed Drain
Current
tp = 10 ms
IDM $50 A
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,
L = 2.7 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ,
TSTG
EAS
−55 to
175
304
°C
mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
RqJC
2.3 °C/W
Junction−to−Ambient – Steady State (Note 1)
RqJA
80
Junction−to−Ambient – Steady State (Note 2)
RqJA
110
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
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V(BR)DSS
−60 V
RDS(on) TYP
130 mW @ −5.0 V
ID MAX
(Note 1)
−15.5 A
P−Channel
D
G
4
12
3
DPAK
CASE 369C
Style 2
4
S
MARKING DIAGRAMS
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
Style 2
20P06L
Y
WW
Device Code
= Year
= Work Week
12 3
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
Publication Order Number:
NTD20P06L/D









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NTD20P06LT4G Даташит, Описание, Даташиты
NTD20P06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = −60 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
Drain−to−Source On−Voltage
gFS
VDS(on)
CHARGES AND CAPACITANCES
VGS = VDS, ID = −250 mA
VGS = −5.0 V, ID = −7.5 A
VGS = −5.0 V, ID = −15 A
VDS = −10 V, ID = −7.5 A
VGS = −5.0 V,
ID = −7.5 A
TJ = 25°C
TJ = 150°C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
VGS = 0 V, f = 1 MHz, VDS = −25 V
VGS = −5.0 V, VDS = −48 V,
ID = −18 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −5.0 V, VDD = −30 V,
ID = −15 A, RG = 9.1 W
Forward Diode Voltage
VSD TJ = 25°C
VGS = 0 V, IS = −15 A TJ = 150°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = −12 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Min
−60
−1.0
Typ Max Units
−74 V
−64 mV/°C
−1.0
−10
±100
mA
nA
−1.5
3.1
0.130
0.143
11
−2.0
0.150
V
mV/°C
W
−1.2
−1.9
S
V
740 1190
207 300
66 120
15 26
4.0
7.0
pF
nC
11 20 ns
90 180
28 50
70 135
1.5 2.5
1.3
60
39
21
0.13
V
ns
nC
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NTD20P06LT4G Даташит, Описание, Даташиты
NTD20P06L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
40
VGS = −10 V
35
VGS = −9 V
30
VGS = −8 V
25 VGS = −7 V
20
15
VGS = −6 V
VGS = −5.5 V
VGS = −5 V
VGS = −4.5 V
VGS = −4 V
40
30
20
TJ = −55°C
TJ = 25°C
TJ = 125°C
10
VGS = −3.5 V
10
5 VGS = −3 V
0 TJ = 25°C
0 1 2 3 4 5 6 7 8 9 10
VDS w 10 V
0
01 2 3 4 5 6 7 8 9
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VDS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.45 VGS = −5 V
0.25
0.225 TJ = 25°C
0.4 0.2
0.35 0.175
0.3
0.25
0.2
TJ = 125°C
0.15
0.125
0.1
VGS = −5 V
VGS = −10 V
0.15
TJ = 25°C
0.075
0.1
0.05
TJ = −55°C
0.05
0.025
00
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8 ID = −7.5 A
1.6 VGS = −5 V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10000
VGS = 0 V
1000
100
TJ = 150°C
TJ = 125°C
10
1
150 5 10 15 20 25 30 35 40 45 50 55 60
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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Номер в каталогеОписаниеПроизводители
NTD20P06LT4Power MOSFET -60 V / -15.5 A / Single P-Channel / DPAKON
ON
NTD20P06LT4GPower MOSFET -60 V / -15.5 A / Single P-Channel / DPAKON
ON

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