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PDF NTD23N03R Data sheet ( Hoja de datos )
| Número de pieza | NTD23N03R | |
| Descripción | 23 Amps / 25 Volts / N-Channel DPAK | |
| Fabricantes | ON | |
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NTD23N03R
Power MOSFET
23 Amps, 25 Volts, N−Channel DPAK
Features
• Pb−Free Packages are Available
• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
http://onsemi.com
V(BR)DSS
25 V
RDS(on) TYP
32 mW
ID MAX
23 A
N−CHANNEL
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance, Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C, Chip
− Continuous @ TC = 25°C,
Limited by Package
− Single Pulse
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
IDM
RqJA
PD
ID
RqJA
PD
ID
TJ, Tstg
25 Vdc
±20 Vdc
5.6 °C/W
22.3 W
23 A
17.1 A
40 A
76 °C/W
1.64 W
4.5 A
110 °C/W
1.14
3.8
−55 to
150
W
A
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
G
S
12
3
MARKING
DIAGRAMS
4 DPAK
CASE 369AA
(Surface Mounted)
STYLE 2
4
Drain
1
Gate
2
Drain
3
Source
4
1
2
3
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
4
Drain
12 3
Gate Drain Source
T23N03
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
NTD23N03R/D
1 page  
10
D = 0.5
0.2
1
0.1
0.05
0.01
SINGLE PULSE
0.1
0.00001
0.0001
NTD23N03R
0.001
0.01
t, TIME (s)
Figure 12. Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.1 1
10
ORDERING INFORMATION
Device
Package
Shipping†
NTD23N03R
DPAK
75 Units/Rail
NTD23N03RG
DPAK
(Pb−Free)
75 Units/Rail
NTD23N03R−1
DPAK−3
75 Units/Rail
NTD23N03R−1G
DPAK
(Pb−Free)
75 Units/Rail
NTD23N03RT4
DPAK
2500 Tape & Reel
NTD23N03RT4G
DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTD23N03R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTD23N03R | 23 Amps / 25 Volts / N-Channel DPAK | ON |
| NTD23N03R-1 | 23 Amps / 25 Volts / N-Channel DPAK | ON |
| NTD23N03R-1G | 23 Amps / 25 Volts / N-Channel DPAK | ON |
| NTD23N03RG | 23 Amps / 25 Volts / N-Channel DPAK | ON |
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