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NTD23N03R-1G PDF даташит

Спецификация NTD23N03R-1G изготовлена ​​​​«ON» и имеет функцию, называемую «23 Amps / 25 Volts / N-Channel DPAK».

Детали детали

Номер произв NTD23N03R-1G
Описание 23 Amps / 25 Volts / N-Channel DPAK
Производители ON
логотип ON логотип 

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NTD23N03R-1G Даташит, Описание, Даташиты
NTD23N03R
Power MOSFET
23 Amps, 25 Volts, N−Channel DPAK
Features
Pb−Free Packages are Available
Planar HD3e Process for Fast Switching Performance
Low RDS(on) to Minimize Conduction Loss
Low Ciss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
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V(BR)DSS
25 V
RDS(on) TYP
32 mW
ID MAX
23 A
N−CHANNEL
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance, Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C, Chip
− Continuous @ TC = 25°C,
Limited by Package
− Single Pulse
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
IDM
RqJA
PD
ID
RqJA
PD
ID
TJ, Tstg
25 Vdc
±20 Vdc
5.6 °C/W
22.3 W
23 A
17.1 A
40 A
76 °C/W
1.64 W
4.5 A
110 °C/W
1.14
3.8
−55 to
150
W
A
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
G
S
12
3
MARKING
DIAGRAMS
4 DPAK
CASE 369AA
(Surface Mounted)
STYLE 2
4
Drain
1
Gate
2
Drain
3
Source
4
1
2
3
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
4
Drain
12 3
Gate Drain Source
T23N03
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
NTD23N03R/D









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NTD23N03R-1G Даташит, Описание, Даташиты
NTD23N03R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 4.5 Vdc, ID = 6 Adc)
(VGS = 10 Vdc, ID = 6 Adc)
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 6 Adc, RG = 3 W)
Fall Time
Gate Charge
(VGS = 4.5 Vdc, ID = 6 Adc,
VDS = 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 6 Adc, VGS = 0 Vdc) (Note 3)
(IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 6 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Symbol
V(br)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
Min Typ Max Unit
25 28
−−
Vdc
− mV/°C
mAdc
− − 1.0
− − 10
±100
nAdc
Vdc
1.0 1.8 2.0
− − − mV/°C
− 50.3 60
− 32.3 45
mW
Mhos
− 13 −
− 225 −
− 108 −
− 48 −
pF
− 2.0 −
− 14.9 −
− 9.9 −
− 2.0 −
− 3.76 −
− 1.7 −
− 1.6 −
ns
nC
− 0.87 1.2
− 0.74 −
− 8.7 −
− 5.2 −
− 3.5 −
− 0.003 −
Vdc
ns
mC
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NTD23N03R-1G Даташит, Описание, Даташиты
20
10 V
16
12
4.5 V
8V
6V
5V
NTD23N03R
20
4 V VDS 10 V
16
3.5 V
12
8
3V
4
VGS = 2.5 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
8
TJ = 25°C
4
TJ = 125°C TJ = −55°C
0
01 2 3 4 5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.20
0.16
VGS = 10 V
0.20
0.16
VGS = 4.5 V
0.12
0.08
0.04
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0 4 8 12 16 20
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.12
0.08
0.04
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0 4 8 12 16 20
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.8
ID = 6 A
1.6 VGS = 10 V
10,000
VGS = 0 V
1.4
1000
TJ = 150°C
1.2
1 100 TJ = 125°C
0.8
0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
0 5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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