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NTD3055L104T4 PDF даташит

Спецификация NTD3055L104T4 изготовлена ​​​​«ON» и имеет функцию, называемую «Power MOSFET ( Transistor )».

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Номер произв NTD3055L104T4
Описание Power MOSFET ( Transistor )
Производители ON
логотип ON логотип 

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NTD3055L104T4 Даташит, Описание, Даташиты
NTD3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Lower RDS(on)
Lower VDS(on)
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage, Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"15
"20
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
12
10
45
48
0.32
2.1
1.5
−55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
IL(pk) = 11 A, VDS = 60 Vdc)
Thermal Resistance, − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS 61 mJ
RqJC
RqJA
RqJA
TL
3.13 °C/W
71.4
100
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
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V(BR)DSS
60 V
RDS(on) TYP
104 mW
ID MAX
12 A
N−Channel
D
G
S
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 2
4
Drain
1
Gate
2
Drain
3
Source
4
DPAK−3
CASE 369D
STYLE 2
4
Drain
1
2
3
12 3
Gate Drain Source
55L104
A
Y
W
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
NTD3055L104/D









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NTD3055L104T4 Даташит, Описание, Даташиты
NTD3055L104
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
60 70
− 62.9 − mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IDSS
IGSS
mAdc
− − 1.0
− − 10
±100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 6.0 Adc)
Static Drain−to−Source On−Voltage (Note 3)
(VGS = 5.0 Vdc, ID = 12 Adc)
(VGS = 5.0 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc)
VGS(th)
RDS(on)
VDS(on)
gFS
Vdc
1.0 1.6 2.0
− 4.2 − mV/°C
mW
− 89 104
Vdc
− 0.98 1.50
− 0.86 −
− 9.1 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
− 316 440 pF
− 105 150
− 35 70
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc, RG = 9.1 W) (Note 3)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 12 Adc, VGS = 0 Vdc) (Note 3)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
− 9.2 20
ns
− 104 210
− 19 40
− 40.5 80
− 7.4 20
nC
− 2.0 −
− 4.0 −
− 0.95 1.2 Vdc
− 0.82 −
− 35 −
− 21 −
ns
− 14 −
− 0.04 −
mC
ORDERING INFORMATION
Device
Package
Shipping
NTD3055L104
DPAK
75 Units/Rail
NTD3055L104G
DPAK
(Pb−Free)
75 Units/Rail
NTD3055L104−1
DPAK−3
75 Units/Rail
NTD3055L104−1G
DPAK−3
(Pb−Free)
75 Units/Rail
NTD3055L104T4
DPAK
2500 Tape & Reel
NTD3055L104T4G
DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NTD3055L104T4 Даташит, Описание, Даташиты
NTD3055L104
24
VGS = 10 V
20
8V
16
6V
12
5V
4.5 V
4V
8 3.5 V
4 3V
0
01 2 34 5 6 7
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
8
24
VDS 10 V
20
16
12
8
TJ = 25°C
4 TJ = 100°C
TJ = −55°C
0
1 1.5 2 2.5 3 3.5 4 4.5
5 5.5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.32
0.28
VGS = 5 V
0.32
0.28
VGS = 10 V
0.24 0.24
TJ = 100°C
0.20 0.20
0.16 0.16
TJ = 25°C
0.12 0.12
0.08
TJ = −55°C
0.08
0.04 0.04
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
04
8 12 16 20 24
0
0 4 8 12 16 20 24
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8
ID = 6 A
VGS = 5 V
1.6
10,000
1000
VGS = 0 V
TJ = 150°C
1.4
100
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10 TJ = 100°C
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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