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PDF NTD4302 Data sheet ( Hoja de datos )

Número de pieza NTD4302
Descripción Power MOSFET 68 Amps / 30 Volts(N-Channel DPAK)
Fabricantes ON 
Logotipo ON Logotipo



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No Preview Available ! NTD4302 Hoja de datos, Descripción, Manual

NTD4302
Power MOSFET
68 Amps, 30 Volts
N−Channel DPAK
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
DPAK Mounting Information Provided
Applications
DC−DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones, and
PCMCIA Cards
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
7.8 mW @ 10 V
ID MAX
68 A
N−Channel
D
G
S
4
4
12
3
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
T4302 = Device Code
Y = Year
WW = Work Week
2
Drain
3
Source
ORDERING INFORMATION
Device
NTD4302
NTD4302−1
Package
DPAK
DPAK
Straight Lead
Shipping
75 Units/Rail
75 Units/Rail
NTD4302T4
DPAK 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 5
1
Publication Order Number:
NTD4302/D

1 page




NTD4302 pdf
NTD4302
6000
5000
4000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
12.5
10
VD
7.5
QT
3000 Crss
2000
Ciss 5
VGS
Q1 Q2
30
25
20
15
1000
Crss
Coss
2.5
0
10 VGS 0 VDS
10
20
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
0
10
ID = 2 A
TJ = 25°C
0
10 20 30 40 50 60
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
VDD = 24 V
ID = 18.5 A
VGS = 10 V
100
tf
td(off)
tr
10
1
td(on)
10
RG, GATE RESISTANCE ()
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
25
VGS = 0 V
TJ = 25°C
20
15
10
5
0
0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
5

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