NTE10 PDF даташит
Спецификация NTE10 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier». |
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Детали детали
Номер произв | NTE10 |
Описание | Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier |
Производители | NTE |
логотип |
2 Pages
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NTE10
Silicon NPN Transistor
UHF Low Noise Wide–Band Amplifier
Features:
D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
D High Power Gain: MAG = 14dB Typ (f = 0.9GHz)
D High Cutoff Frequency: fT = 5GHz Typ
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 12V, IE = 0
– – 1.0 µA
Emitter Cutoff Current
IEBO VEB = 2V, IC = 0
– – 10 µA
DC Current Gain
hFE VCE = 10V, IC = 20mA
40 – 200
Gain–Bandwidth Product
fT VCE = 10V, IC = 20mA
– 5.0 – GHz
Output Capacitance
Cob VCB = 10V, f = 1MHz
– 0.8 1.1 pF
Reverse Transfer Capacitance
Cre VCB = 10V, f = 1MHz
– 0.5 – pF
Forward Transfer Gain
|S21e|2 VCE = 10V, IC = 20mA, f = 0.9GHz 8 10 – dB
Maximum Available Power Gain MAG VCE = 10V, IC = 5mA, f = 0.9GHz – 14 – dB
Noise Figure
NF VCE = 10V, IC = 5mA, f = 0.9GHz – 2.2 4.5 dB
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.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
BEC
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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Номер в каталоге | Описание | Производители |
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