NTE108 PDF даташит
Спецификация NTE108 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor High Frequency Amplifier». |
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Детали детали
Номер произв | NTE108 |
Описание | Silicon NPN Transistor High Frequency Amplifier |
Производители | NTE |
логотип |
2 Pages
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NTE108
Silicon NPN Transistor
High Frequency Amplifier
Description:
The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency
amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise
and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W
Note 1. RΘJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 3mA, IB = 0, Note 2
V(BR)CBO IC = 1µA, IE = 0
V(BR)EBO IE = 10µA, IC = 0
ICBO VCB = 15V, IE = 0
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
Min Typ Max Unit
15 – – V
30 – – V
3––V
– – 10 nA
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 3mA, VCE = 1V, Note 2
IC = 8mA, VCE = 10V, Note 2
IC = 10mA, IB = 1mA
IC = 10mA, IB = 1mA
20 – –
20 – 200
– – 0.4 V
– – 1.0 V
Current Gain–Bandwidth Product
fT IC = 4mA, VCE = 10V,
f = 100MHz, Note 2
600 – – MHz
Output Capacitance
Input Capacitance
Noise Figure
Functional Test
Cobo
Cibo
NF
VCB = 0V, IE = 0, f = 140kHz
VCB = 10V, IE = 0, f = 140kHz
VEB = 0.5V, IC = 0, f = 140kHz
IC = 1mA, VCE = 6V,
RS = 400Ω, f = 60MHz
–
–
–
–
– 3.0 pF
– 1.7 pF
– 2.0 pF
– 6 dB
Common–Emitter Amplifier Power
Gain
Power Output
Gpe IC = 6mA, VCB = 12V,
15 –
f = 200MHz (Gfd + Gre < –20dB)
Pout IC = 8mA, VCB = 15V,
f = 500MHz
30 –
– dB
– mW
Oscillator Collector Efficiency
η IC = 8mA, VCB = 15V,
Pout = 30mW, f = 500MHz
25 – – %
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
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